Nonvolatile Memory Address Decoder Segmentation for Voltage Pumping
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Solution Overview
Problem
Nonvolatile memory devices face challenges in reducing the required voltage pumping capacity, which affects their efficiency and performance, especially as they strive to handle higher integration densities and multi-bit data storage.
Innovation Solution
The implementation of a nonvolatile memory device design that includes a first and second address decoder, a switch circuit, and a negative voltage level generator, allowing for the selective application of negative voltage to specific memory blocks and word lines based on block address information, thereby reducing the voltage pumping capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If negative voltage is applied to all address decoders, then voltage pumping capacity is reduced, but device complexity increases due to additional switch circuits
Solution Approach 1:
The address decoder system is segmented into multiple independent groups, each with its own well structure. The switch circuit selectively connects negative voltage to specific decoder groups based on block address information, allowing energy-efficient operation without requiring negative voltage across the entire system simultaneously.
Solution Approach 2:
The well connection configuration is made dynamic through switch circuits that can reconfigure which decoder groups receive negative voltage based on operational requirements. This dynamic reconfiguration allows the system to adapt voltage distribution to actual usage patterns, reducing overall voltage pumping capacity requirements.
2Productivity
If multiple memory blocks are accessed simultaneously, then productivity increases, but voltage pumping capacity requirements increase
Solution Approach 1:
Memory blocks are organized into separate groups, each associated with specific address decoders having isolated wells. This segmentation allows independent voltage control for each group, enabling simultaneous access to multiple blocks while maintaining lower overall voltage pumping capacity through selective negative voltage application.
Solution Approach 2:
Different voltage conditions are applied to different decoder groups based on local requirements. When multiple memory blocks need to be accessed, negative voltage is selectively applied only to the specific decoder groups handling those blocks, rather than applying negative voltage system-wide, thus maintaining productivity while reducing voltage pumping capacity requirements.
Data Source
AI summary
A nonvolatile memory device includes a first address decoder and a second address decoder. The first address decoder includes a plurality of transistors disposed in a first well, and the second address decoder includes a plurality of transistors disposed in a second well that is electrically isolated from the first well. The first and second address decoders are associated with first and second memory blocks, respectively. A switch circuit is configured to provide a negative voltage to one of the first address decoder and the second address decoder on the basis of block address information that specifies an address included in one of the first memory block and the second memory block. Related methods of operation are also discussed.