Semiconductor Memory Decoding Control for Word Line Management

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Solution Overview

Problem

Current semiconductor memory apparatuses face challenges in efficiently managing word lines and bit lines for data storage and retrieval, particularly in enabling the right combination of word lines for reliable data storage and high storage capacity.

Innovation Solution

The semiconductor memory apparatus employs decoding control blocks to generate specific decoding control signals in response to enable or disable the double enable signal, allowing for the simultaneous or individual enabling of word lines based on address inputs, thereby optimizing data storage and retrieval operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If multiple word lines are simultaneously enabled for data storage, then data reliability is improved through redundant storage, but device complexity increases due to additional decoding control signals and circuitry

Engineering Contradiction:
Improvedata reliabilityVSAvoiddecoding control block complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The decoding control block dynamically adjusts its operation mode based on the double enable signal state. When the double enable signal is active, the block enables multiple word lines simultaneously for redundant data storage; when inactive, it operates in normal single word line mode. This dynamic switching allows the system to adapt between reliability enhancement and normal operation without permanent structural complexity

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system changes the operational parameters of the decoding control block by modifying the state of decoding control signals (first and second decoding control signals) based on the double enable signal. This parameter change enables the block to switch between different word line enabling modes, achieving variable reliability levels without hardware reconfiguration

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If individual word lines are enabled for data storage, then storage capacity is maximized with efficient address mapping, but data reliability decreases due to lack of redundant storage

Engineering Contradiction:
Improvestorage capacityVSAvoiddata reliability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The decoding control block serves multiple functions: it can enable single word lines for normal storage operations to maximize capacity, or enable multiple word lines simultaneously for redundant storage to enhance reliability. The same block handles both operational modes, providing universal functionality that adapts to different data protection requirements without requiring separate dedicated circuits

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Adaptability or versatility

If double enable signal processing is added to support multiple word line enabling, then operational versatility is improved, but manufacturing complexity increases

Engineering Contradiction:
Improveoperational versatilityVSAvoidmanufacturing complexity
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The decoding control block is segmented into functional sub-components that process the double enable signal and generate appropriate decoding control signals. By dividing the control logic into manageable segments (receiving unit, processing unit, output unit), the manufacturing process becomes more systematic and less complex, as each segment can be designed and verified independently

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS9570136B2Semiconductor memory apparatus
Publication Date: 2017.02.14 SK HYNIX INC
  • US9570136B2 patent drawing
  • US9570136B2 patent drawing
  • US9570136B2 patent drawing

AI summary

A semiconductor memory apparatus may include a decoding control block configured to generate a first decoding control signal and a second decoding control signal in response to a double enable signal and a first address. The semiconductor memory apparatus may include a decoding block configured to enable only one word line among a plurality of word lines or may simultaneously enable at least two word lines among the plurality of word lines, in response to the first and second decoding control signals and a second address.