Memory Decoding Using Neighbor Threshold Voltage Differences

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Solution Overview

Problem

Non-volatile memory devices, such as USB flash memory and removable storage cards, face errors due to cross-coupling effects between adjacent memory cells, leading to inaccurate data reading and decoding.

Innovation Solution

The system decodes data from a first group of storage elements by utilizing data from a second group of storage elements and their physical characteristics, specifically using error correction codes and the difference between predicted and read threshold voltages to account for cross-coupling effects, thereby improving data reading accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If process advances enable smaller physical dimensions of memory cells, then storage density increases, but cross-coupling effects between neighboring cells become more pronounced

Engineering Contradiction:
Improvestorage densityVSAvoidcross-coupling effects
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent measures the cross-coupling effects (harmful factor) by reading threshold voltages of neighboring storage elements, then uses this measured information to compensate for the coupling effects during decoding. This converts the harmful cross-coupling into useful information that improves decoding accuracy of the target storage elements.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Reliability

If error correction code processing is used to correct reading errors, then data reliability improves, but decoding complexity increases

Engineering Contradiction:
Improvedata reliabilityVSAvoiddecoding complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent performs preliminary measurement of cross-coupling effects by reading threshold voltages of neighboring storage elements before the main decoding process. This preliminary action provides compensation information that simplifies the subsequent ECC decoding by pre-characterizing the coupling effects, reducing the complexity of the overall decoding process.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent introduces an intermediary measurement step that reads threshold voltages of neighboring storage elements. This intermediary information acts as a mediator between the physical cross-coupling effects and the logical decoding process, enabling more accurate error correction without requiring complex decoding algorithms.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Measurement precision

If fine reading resolution is used to accurately detect threshold voltages, then measurement precision improves, but reading time increases

Engineering Contradiction:
Improvethreshold voltage measurement precisionVSAvoidreading time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent performs fine-resolution threshold voltage readings on only the neighboring storage elements (partial action) rather than all storage elements in the memory array. This selective measurement provides sufficient precision for measuring cross-coupling effects while minimizing the time penalty associated with high-resolution readings.

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentUS8879317B2System and method of decoding data from memory based on sensing information and decoded data of neighboring storage elements
Publication Date: 2014.11.04 SANDISK TECHNOLOGIES LLC
  • US8879317B2 patent drawing
  • US8879317B2 patent drawing
  • US8879317B2 patent drawing

AI summary

Systems and methods to decode data stored in a data storage device are disclosed. Data bits stored in a first group of storage elements are decoded using data in a second group of storage elements together with physical characteristics of the second group of storage elements to aid in the decoding of the first group of storage elements.