Solid State Memory Decoding with Targeted Re-Reads
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Solution Overview
Problem
Existing solid state storage devices face challenges in effectively correcting errors as the number of bits per cell increases, leading to a need for advanced systems and methods for data recovery.
Innovation Solution
The implementation of a data processing system that includes a solid state memory device and a data processing circuit with a soft information calculation circuit and a data decoding circuit, which calculates probabilities of data correctness and applies a data decoding algorithm to recover data, identifying critical locations for re-reads using different threshold values to improve error correction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of bits per cell in solid state memory is increased to improve storage capacity, then storage density is improved, but error correction capability deteriorates
Solution Approach 1:
The patent segments the data recovery process into multiple stages: initial decoding attempt, soft information calculation, identification of critical locations, and targeted re-reads. This segmentation allows the system to handle errors more effectively in multi-bit cells by focusing computational resources on problematic areas rather than treating all data uniformly.
Solution Approach 2:
The patent changes the parameter of read threshold values during the recovery process. By adjusting threshold values for re-read operations at critical locations, the system can extract more reliable soft information from memory cells, improving error correction capability without sacrificing storage density.
2Reliability
If traditional error correction schemes are used to maintain data integrity, then reliability is maintained, but effectiveness deteriorates when bits per cell increase
Solution Approach 1:
The patent implements a dynamic error correction approach where the system adapts its strategy based on the specific error patterns detected. Rather than using a static correction scheme, the system dynamically identifies critical locations and adjusts re-read parameters, making the error correction process adaptable to the actual error conditions in multi-bit cell memory.
Solution Approach 2:
The patent incorporates feedback mechanisms where soft information from initial reads is used to identify critical locations, which then guide subsequent re-read operations. This feedback loop allows the system to continuously improve its error correction effectiveness by learning from the results of previous decoding attempts and adjusting its strategy accordingly.
3Reliability
If global re-read of entire data set is performed to improve error correction, then data recovery performance is improved, but time consumption and productivity deteriorate
Solution Approach 1:
The patent extracts and focuses computational resources only on critical locations that are most likely to contain errors. By identifying and isolating these problematic areas rather than processing the entire data set, the system achieves effective error correction with significantly reduced time consumption compared to global re-read approaches.
Solution Approach 2:
The patent applies partial action by performing re-reads only at identified critical locations rather than across the entire data set. This selective approach provides sufficient error correction capability for the most problematic areas while avoiding the excessive time cost of processing all data, achieving an optimal balance between recovery performance and efficiency.
Data Source
AI summary
Systems and method relating generally to data processing, and more particularly to systems and methods for accessing a data set from a solid state storage device, using a data decoding circuit to apply a data decoding algorithm to the data set to yield a decoded output, where the decoded output includes at least one error, identifying at least one critical location in the data set, and estimating a voltage associated with the data in the data set corresponding to the critical location.