Memory Device Backup Firmware for Recovery and Failure Diagnosis
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Solution Overview
Problem
Non-volatile memory devices, such as SSDs, often fail to communicate with host systems, leading to resource and power wastage, and require costly and destructive physical replacement, especially in automotive applications.
Innovation Solution
Implementing a recovery boot mode that allows memory devices to initialize using backup firmware, enabling communication resumption and providing debug information to resolve failures without physical destruction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If physical replacement of failed memory devices is performed, then reliability is improved, but loss of time and manufacturing cost increase
Solution Approach 1:
The patent stores backup firmware in a separate storage region within the memory device before failure occurs. When failure is detected, the host system can initialize recovery boot mode using this pre-stored backup firmware, eliminating the need for physical replacement and service center visits.
Solution Approach 2:
The memory device performs self-recovery by initializing boot mode with backup firmware when failure is detected. The device autonomously provides debug information and restores functionality without requiring external physical intervention or replacement.
2Reliability
If physical replacement of failed memory devices is performed, then reliability is improved, but manufacturing cost increases
Solution Approach 1:
Backup firmware is pre-stored in the memory device during manufacturing, enabling future recovery without physical replacement. This preliminary preparation eliminates costly service center visits and reduces overall manufacturing costs despite initial complexity.
Solution Approach 2:
Instead of discarding failed memory devices through physical replacement, the system recovers them by initializing boot mode with stored backup firmware. This approach transforms a disposable component model into a recoverable asset model, reducing service costs.
3Ease of repair
If recovery boot mode is implemented, then ease of repair is improved, but device complexity increases
Solution Approach 1:
The firmware is segmented into primary firmware and backup firmware stored in separate regions. This segmentation allows independent recovery of the backup firmware without affecting the overall device structure, simplifying the repair process despite the added complexity.
Solution Approach 2:
The memory device is designed with multi-functionality to operate in both normal mode and recovery boot mode. The same hardware structure serves dual purposes: standard operation and self-recovery, reducing the need for additional specialized components.
4Loss of information
If debug information is provided during recovery, then loss of information is reduced, but device complexity increases
Solution Approach 1:
The system implements feedback by providing debug information from the failed memory device to the host system during recovery boot mode. This feedback mechanism enables diagnostic analysis of the failure without requiring complex external testing equipment.
Solution Approach 2:
The host system acts as an intermediary that receives and processes debug information from the memory device during recovery. This intermediary role allows complex diagnostic data to be handled externally, reducing the complexity burden on the memory device itself.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables on-site recovery and reduces resource waste by allowing memory devices to resume operations and provide immediate debug information, minimizing physical destruction and service center visits.
Implementation Method 1
applying a high positive voltage, which may be referred to as a 'program voltage,' a 'programming power voltage,' or 'VPP,' to a control gate to generate Fowler-Nordheim tunneling (referred to as 'F-N tunneling') between a floating gate and the semiconductor substrate. When F-N tunneling is occurring, electrons of the bulk area are accumulated on the floating gate by an electric field of VPP applied to the control gate
Implementation Method 2
An erasing operation of the memory cell is concurrently performed in units of sectors sharing the bulk area (referred to as 'blocks'), by applying a high negative voltage, which may be referred to as an 'erase voltage' or 'Vera,' to the control gate and a configured voltage to the bulk area to generate the F-N tunneling. In this case, electrons accumulated on the floating gate are discharged into the source area
Data Source
AI summary
Implementations described herein relate to implementing a recovery mode for a memory device. In some implementations, the memory device may include memory and one or more components. The one or more components may be configured to receive, from a host system, an indication that the memory device is associated with a failure. The one or more components may be configured to receive, from the host system, a request to initialize a recovery of the memory device in response to the failure. The one or more components may be configured to initialize, based on the request, a reboot of the memory device. The one or more components may be configured to transmit, to the host system, status information obtained while rebooting the memory device, wherein the status information includes information associated with a current operational state of the memory device.