Memory Device Sensing by Channel Position Near Slits
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Solution Overview
Problem
Existing memory devices face challenges in optimizing read operations based on the position and characteristics of memory cells, leading to inefficiencies in sensing and programming performance.
Innovation Solution
The memory device includes a plurality of memory cells connected to channels passing through word lines, with different sensing operations performed on first and second memory cells during differently set time periods based on their distance from slits, and controlled by a program controller to improve sensing and programming performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a uniform sensing operation is performed on all memory cells, then the device complexity is reduced, but the sensing performance deteriorates due to inability to account for position and characteristic differences
Solution Approach 1:
The patent applies local quality by differentiating sensing operations based on memory cell position and characteristics. Memory cells are divided into first memory cells (closer to address decoder) and second memory cells (farther from address decoder), each receiving customized sensing time periods. This localized optimization improves sensing performance for different cell regions without requiring complete system redesign.
Solution Approach 2:
The patent implements dynamics by making the sensing time period adjustable and variable. The program controller dynamically selects different sensing time periods based on the position of memory cells being read. This dynamic adaptation allows the system to optimize sensing performance for different cell locations without hardcoding complex timing sequences, balancing performance improvement with manageable complexity.
2Measurement precision
If different sensing time periods are applied to memory cells at different positions, then the sensing performance is improved, but the device complexity increases due to additional control requirements
Solution Approach 1:
The patent differentiates sensing operations by local cell position, applying shorter sensing time periods to first memory cells closer to the address decoder and longer periods to second memory cells farther away. This localized optimization targets the specific needs of different regions without requiring complex global control mechanisms.
Solution Approach 2:
The patent optimizes sensing performance by changing the sensing time period parameter based on memory cell position. The program controller adjusts this single critical parameter dynamically, selecting from predefined sensing time periods corresponding to different cell positions. This parameter-based approach improves performance while keeping control logic relatively simple compared to redesigning the entire sensing architecture.
3Productivity
If memory cells are accessed sequentially without position-based optimization, then the operation simplicity is maintained, but the productivity decreases due to inefficient sensing operations
Solution Approach 1:
The patent applies preliminary action by pre-defining different sensing time periods for memory cells at different positions before the actual sensing operation. The program controller retrieves the appropriate sensing time period based on cell position information that is already available from the address decoder. This advance preparation allows optimized sensing without adding complex real-time decision-making during the sensing process itself.
Solution Approach 2:
The patent implements dynamics by making the sensing time period adjustable and variable based on memory cell position. The program controller dynamically selects different sensing time periods for first memory cells (closer to address decoder) and second memory cells (farther away), optimizing programming performance for different cell locations without requiring complete system redesign.
Data Source
AI summary
The present technology relates to an electronic device. According to the present technology, a memory device may include a plurality of memory cells, a read and write circuit, and a program controller. The plurality of memory cells may be connected to a plurality of channels passing through a plurality of word lines. The program controller may control the read and write circuit to perform a sensing operation on first memory cells and second memory cells among the plurality of memory cells during differently set sensing time periods. The first memory cells may be connected to first channels adjacent to a plurality of slits, among a plurality of channels separated by the plurality of slits. The second memory cells may be connected to second channels farther from the plurality of slits than the first channels.