Memory Device Fast Program via Reduced Threshold Voltage Distributions
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Solution Overview
Problem
Existing memory devices face challenges in improving the execution speed of program and read operations, as current technologies require complex threshold voltage distributions to store and retrieve data efficiently.
Innovation Solution
The memory device employs a peripheral unit that controls memory cells to form specific threshold voltage distributions, allowing for the storage of k bits per memory cell. During a normal program operation, 2k threshold voltage distributions are formed, while a fast program operation reduces this to 2k−1+1 distributions, enabling faster data storage and retrieval.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If traditional threshold voltage distributions are used to store k bits in each memory cell, then data storage capacity is maintained, but program operation speed is slow
Solution Approach 1:
The patent segments the threshold voltage distributions into distinct groups corresponding to different data patterns. By dividing the memory cells into subsets based on their threshold voltage characteristics and applying targeted program operations to each subset, the system achieves faster overall program speeds without sacrificing storage capacity. This segmentation allows parallel processing of different data patterns.
Solution Approach 2:
The patent applies partial program operations to subsets of memory cells rather than uniformly programming all cells. By identifying and programming only the necessary subsets of memory cells based on their current state and target data pattern, the system reduces the total number of program pulses required, thereby increasing program speed while maintaining data integrity.
2Measurement precision
If more threshold voltage distributions are formed to improve data retrieval accuracy, then read operation precision is improved, but program operation time increases
Solution Approach 1:
The patent performs preliminary classification of memory cells into subsets based on their threshold voltage characteristics before the actual program operation. This preliminary action allows the system to pre-determine which subsets require which program operations, enabling more accurate data retrieval while reducing the time penalty by avoiding repeated classification during read operations.
Solution Approach 2:
The patent dynamically adjusts program operation parameters such as pulse amplitude and duration based on the specific subset of memory cells being programmed. By changing these parameters according to the threshold voltage distribution characteristics of each subset, the system achieves both high read accuracy and reduced program time by optimizing the programming process for each group.
Data Source
AI summary
A memory device includes a plurality of memory cells; and a peripheral unit configured to store k bits in each of the memory cells by controlling the memory cells to form 2k−1+1 threshold voltage distributions, k being an integer.