Memory Device Ultra-Deep Power-Down Mode

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Solution Overview

Problem

Memory devices face challenges in minimizing power consumption, particularly in portable applications, where existing power-down modes do not sufficiently reduce energy usage, leading to limited battery life and increased device size, cost, and weight.

Innovation Solution

The implementation of an ultra-deep power-down mode in memory devices, enabled by a unique command opcode, which completely powers down VDD domain blocks and memory arrays, using a wake-up signal to restore power, and supporting various reset operations to exit this mode, including hardware reset commands and dedicated SPI commands.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If existing power-down modes are used, then power consumption is reduced to some extent, but power consumption is not sufficiently reduced and battery life is limited

Engineering Contradiction:
Improvepower consumptionVSAvoidbattery life
Core Design Contradiction:
Use of energy by moving objectVSDuration of action of moving object

Solution Approach 1:

The memory device is divided into multiple independently controllable power domains (VDD domain blocks and memory arrays), allowing selective powering down of specific segments while maintaining others in standby, achieving granular power management that significantly reduces overall power consumption

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements multiple power-down modes (deep power-down and ultra-deep power-down) by changing operational parameters such as voltage levels and circuit states, enabling the device to transition between different power consumption states based on system requirements

Inventive Principle:
Principle #35Parameter changes

2Use of energy by moving object

If ultra-deep power-down mode is implemented to reduce power consumption, then battery life is prolonged, but device complexity increases due to multiple power domains and control mechanisms

Engineering Contradiction:
Improvepower consumptionVSAvoiddevice complexity
Core Design Contradiction:
Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The power management circuitry is designed to handle multiple power-down modes (deep and ultra-deep) and multiple reset operations through a unified control architecture, reducing the need for separate dedicated circuits for each function and thereby managing complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Ease of operation

If multiple reset operations are supported to exit ultra-deep power-down mode, then ease of operation is improved, but device complexity increases

Engineering Contradiction:
Improveease of operationVSAvoiddevice complexity
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The memory device includes internal circuitry that automatically detects the power-down mode and executes the appropriate reset sequence without external intervention, supporting multiple reset operations (hardware reset, dedicated SPI command, power-up) through self-service mechanisms that simplify external operation

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS10539989B1Memory device alert of completion of internally self-timed power-up and reset operations
Publication Date: 2020.01.21 ADESTO TECHNOLOGIES CORP
  • US10539989B1 patent drawing
  • US10539989B1 patent drawing
  • US10539989B1 patent drawing

AI summary

A memory device can include: a non-volatile storage register configured to store an active reset polling enable bit that corresponds to a reset operation; a controller configured to control execution of the reset operation on the memory device; an operation completion indicator configured to provide a reset recovery indication external to the memory device when the reset operation has completed and the active reset polling enable bit is set; and a command decoder configured to receive a command to be executed on the memory device in response to the reset recovery indication.