Memory Device Precharging Decoded Row Address for Power Gating
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Solution Overview
Problem
Memory devices, such as DRAM, face increased power consumption due to undetermined row addresses, which prevents the application of power-gating mechanisms, leading to higher energy usage, especially in modes where banks are closed or precharged.
Innovation Solution
A memory device with a row decoder and interface circuit that generates and precharges decoded row addresses based on mode-specific signals, allowing for power-gating in self-refresh and precharge power-down modes to reduce power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If power-gating mechanism is applied to reduce power consumption, then power consumption is reduced, but it cannot be applied when decoded row address is in undetermined state
Solution Approach 1:
The interface circuit precharges the decoded row address to a predetermined level before the row address is fully decoded or determined. This preliminary action ensures that the row address is in a known state, enabling power-gating mechanisms to be applied safely without risking undefined behavior in the row decoder.
2Loss of energy
If precharging decoded row address is performed in all modes, then power-gating can be applied, but it increases complexity of control logic
Solution Approach 1:
The interface circuit dynamically adjusts its behavior based on the operational mode. In self-refresh mode, the circuit precharges the decoded row address to enable power-gating. In other modes, it follows standard row address decoding procedures. This dynamic adaptation allows power-saving features to be activated only when appropriate, avoiding unnecessary complexity in control logic.
Data Source
AI summary
A memory device and a method of precharging a decoded address are provided. The memory device includes a memory cell array comprising a plurality of rows; a row decoder configured to select a row to be activated from among the plurality of rows based on a decoded row address; and an interface circuit configured to: generate the decoded row address based on decoding a plurality of bits of a row address, transfer the decoded row address to the row decoder, in a first mode of the memory device, precharge the decoded row address that is transferred to the row decoder, and in a second mode of the memory device, determine whether a precharge signal is received in the second mode, and precharge the decoded row address based on the precharge signal.