Memory Device PUF Key Generation via Redundancy Sense Amplifier

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Solution Overview

Problem

Conventional memory devices face challenges in securely storing key information, as non-volatile memory is vulnerable to data leakage and physical security attacks, and existing solutions do not provide sufficient security for unique chip information.

Innovation Solution

A memory system that includes a memory device capable of generating unpredictable chip-specific information by utilizing a distribution of elements, specifically through a physically unclonable function (PUF) key generated by a redundancy bit line sense amplifier, which produces a unique random digital value.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Duration of action of stationary object

If key information is stored in non-volatile memory, then data persistence is improved, but security against physical attacks deteriorates

Engineering Contradiction:
Improvedata persistenceVSAvoidsecurity vulnerability
Core Design Contradiction:
Duration of action of stationary objectVSObject-affected harmful factors

Solution Approach 1:

The patent introduces a PUF (Physically Unclonable Function) mechanism as an intermediary layer between the stored key information and the external access interface. The PUF generates unique challenge-response pairs based on physical characteristics of the memory device, acting as a mediator that prevents direct access to stored keys while maintaining data persistence in non-volatile memory.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The security system combines multiple functional components: non-volatile memory for data persistence, PUF circuitry for physical unclonability, and challenge-response authentication logic. This composite structure integrates the advantages of each component to achieve both long-term storage and enhanced security against physical attacks.

Inventive Principle:
Principle #40Composite materials

2Adaptability or versatility

If data is stored separately in non-volatile memory, then data management flexibility is improved, but risk of data leakage deteriorates

Engineering Contradiction:
Improvedata management flexibilityVSAvoiddata leakage risk
Core Design Contradiction:
Adaptability or versatilityVSObject-affected harmful factors

Solution Approach 1:

The PUF mechanism serves as an intermediary that controls access to separately stored data. Instead of directly accessing the non-volatile memory, the system uses PUF-generated challenge-response authentication, maintaining management flexibility while preventing unauthorized data leakage through physical security attacks.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Ease of manufacture

If conventional storage methods are used, then ease of implementation is improved, but security against physical attacks deteriorates

Engineering Contradiction:
Improveimplementation simplicityVSAvoidphysical attack vulnerability
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The patent makes the non-volatile memory device multi-functional by integrating both data storage and PUF-based security authentication capabilities within the same device. This universal approach maintains ease of implementation (using existing NVM structures) while adding security functionality to protect against physical attacks.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20250080366A1Memory Device and Memory System Having the Same
Publication Date: 2025.03.06 SAMSUNG ELECTRONICS CO LTD
  • US20250080366A1 patent drawing
  • US20250080366A1 patent drawing
  • US20250080366A1 patent drawing

AI summary

A memory system includes a plurality of memory cells at intersections between a plurality of word lines and a plurality of bit lines, and a plurality of bit line sense amplifiers connected to the plurality of bit lines, the plurality of bit line sense amplifiers configured to write data to or read data from the plurality of memory cells through the plurality of bit lines, a redundancy bit line sense amplifier among the plurality of bit line sense amplifiers configured to generate a physically unclonable function (PUF) key including a unique random digital value.