Memory Device Self-Measurement of Functional Parameters
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Solution Overview
Problem
The parametric testing of non-volatile memory devices is inefficient and burdensome due to the need for continuous interaction with test apparatuses to measure various functional parameters, requiring different test routines and additional processing for each parameter.
Innovation Solution
Incorporating a measure block within the memory device that receives measure instructions and generates corresponding time signals to determine the execution time of memory operations, allowing direct provision of numerical measure values to the test apparatus, eliminating the need for complex test instructions and dedicated routines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If electrical wafer sort (EWS) technique is used for parametric testing, then measurement capability is provided, but test duration and complexity increase due to continuous interaction with test apparatus
Solution Approach 1:
The memory device performs self-measurement of functional parameters by executing measurement instructions internally and generating measure values autonomously. The device includes a measure block that receives measurement instructions from the test apparatus, executes the selected memory operation, and automatically determines the measure value without requiring external measurement circuits or continuous test apparatus interaction.
Solution Approach 2:
The measurement function is extracted from the test apparatus and transferred to the memory device itself. Instead of using external test equipment to measure functional parameters, the memory device incorporates its own measurement capability through the measure block, which can autonomously execute measurement instructions and provide measure values.
2Adaptability or versatility
If multiple different test routines are implemented for different functional parameters, then comprehensive measurement capability is achieved, but device complexity and ease of operation deteriorate
Solution Approach 1:
A single measure block within the memory device serves multiple measurement functions by accepting different types of measurement instructions and executing corresponding memory operations. The same measure block can measure various functional parameters such as read access time, write access time, erase time, and clock frequency without requiring separate measurement circuits or complex external test routines.
Solution Approach 2:
The measurement capability is achieved by changing the parameters of the memory operation being executed rather than changing the measurement hardware. The measure block executes different memory operations (read, write, erase) with different timing parameters to measure various functional parameters, simplifying the overall measurement system.
3Measurement precision
If external processing blocks are used to process measurement results, then accurate functional parameter characterization is achieved, but ease of operation and productivity decrease
Solution Approach 1:
The memory device autonomously processes measurement results by internally determining the measure value from the execution of memory operations. The measure block automatically calculates timing parameters and provides the final measure value without requiring external processing blocks, thereby improving testing efficiency while maintaining measurement accuracy.
Data Source
AI summary
A non-volatile memory device may be integrated in a chip of semiconductor material. The memory device may include circuitry for receiving a measure instruction for obtaining a numerical measure value of a selected one among a plurality of predefined memory operations of the memory device. The memory device may also include circuitry for enabling the execution of the selected memory operation in response to the measure instruction. The execution of the selected memory operation may generate a corresponding result. The memory device may further include circuitry for providing at least one time signal, different from the corresponding result, relating to the execution of each memory operation, and circuitry for determining the measure value according to the at least one time signal of the selected memory operation.