Memory Device Internal Error Correction via Trim Value Adjustment
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Solution Overview
Problem
Current memory devices rely on external controllers to perform error correction operations, which burdens the system and does not address the source of errors, such as threshold voltage drift, leading to potential data corruption and performance issues.
Innovation Solution
The memory device adjusts trim values, specifically minimum and maximum read voltages, to correct errors internally, allowing for independent error correction and storage of these adjusted values for subsequent operations, thereby addressing the root cause of errors like threshold voltage drift.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If external controllers perform error correction operations, then error correction capability is provided, but system complexity and burden on external controllers increases
Solution Approach 1:
The memory device performs error correction operations autonomously using internal circuitry, including ECC logic and trim value adjustment mechanisms. The device self-diagnoses threshold voltage drift errors and self-corrects by adjusting read voltage trim values without requiring external controller intervention, thereby reducing system complexity while maintaining error correction capability
Solution Approach 2:
The error correction function is extracted from the external controller and transferred to the memory device itself. By implementing dedicated ECC circuitry and trim value adjustment logic within the memory device, the burden on external controllers is eliminated while preserving the error correction capability
2Reliability
If traditional ECC methods are used, then bit errors are detected and corrected, but root cause of errors such as threshold voltage drift is not addressed
Solution Approach 1:
The system implements feedback by monitoring ECC operation results and using this information to dynamically adjust trim values. When threshold voltage drift errors are detected, the system feeds back this information to the trim value adjustment logic, which then modifies read voltage levels to compensate for the drift, preventing future errors of the same type
Solution Approach 2:
The system performs preliminary trim value adjustment based on detected error patterns before data corruption becomes irreversible. By proactively adjusting read voltage trim values in response to detected threshold voltage drift, the system prevents further data integrity issues rather than merely reacting to completed errors
3Measurement precision
If trim values are adjusted to correct threshold voltage drift, then read accuracy is improved, but additional control mechanisms are required
Solution Approach 1:
The trim value adjustment functionality is merged with the existing ECC logic and control circuitry within the memory device. By integrating the trim adjustment mechanism into the existing error correction infrastructure, the system achieves improved read accuracy without proportionally increasing overall device complexity
Solution Approach 2:
The system changes operational parameters (read voltage trim values) dynamically based on detected error conditions. By adjusting voltage parameters in response to threshold voltage drift, the system maintains read accuracy across varying memory cell characteristics without requiring complex structural modifications
Data Source
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AI summary
Error correction operations in memory devices are disclosed. In at least one embodiment, an internal controller of a memory device is configured to perform internal error correction operations on stored user data and correct user data in the memory device independently from instructions from an external memory access device.