Memory Device TSV Noise Blocking via Cell Capacitor
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Solution Overview
Problem
As semiconductor memory devices are miniaturized and highly integrated, the increasing number of through-substrate vias (TSVs) leads to higher power consumption, necessitating a technique to reduce power consumption while maintaining data signal reliability.
Innovation Solution
A memory device architecture that uses a buffer die to supply a low power supply voltage and generates a small swing data signal, with a core die equipped with a cell capacitor to block noise and reduce power consumption by transmitting data through TSVs, utilizing a voltage lower than the standard power supply voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of TSVs is increased to achieve high integration and miniaturization, then the integration density and speed are improved, but power consumption increases
Solution Approach 1:
The patent changes the voltage parameter of data signals transmitted through TSVs from standard voltage levels to reduced voltage levels (e.g., from 1.2V to 0.6V). This parameter change directly reduces power consumption while maintaining signal integrity through careful circuit design and noise blocking mechanisms.
2Reliability
If standard voltage data signals are transmitted through TSVs, then signal strength is maintained, but power consumption increases
Solution Approach 1:
The patent reduces the voltage parameter of data signals from standard levels to lower levels, thereby reducing power consumption while maintaining adequate signal strength through optimized receiver sensitivity and signal conditioning circuits.
Solution Approach 2:
The patent introduces cell capacitors as intermediary elements that block noise and stabilize voltage levels during signal transmission through TSVs. These capacitors act as mediators that maintain signal integrity even at reduced voltage levels, enabling reliable low-power communication.
3Use of energy by moving object
If low power supply voltage is used to reduce power consumption, then energy efficiency is improved, but noise susceptibility increases
Solution Approach 1:
The patent introduces cell capacitors positioned near TSV connections that act as noise blocking intermediaries. These capacitors filter out high-frequency noise and voltage fluctuations, protecting the low-voltage data signals from electromagnetic interference and power supply noise.
Solution Approach 2:
The patent places cell capacitors in advance near the TSV connection points to cushion against incoming noise before it can affect the low-voltage data signals. This proactive noise blocking prevents signal degradation and maintains reliability despite the reduced voltage margin.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces power consumption and improves the reliability of the small swing data signal by blocking noise, thereby enhancing the efficiency and performance of the memory device.
Implementation Method 1
a first cell capacitor electrically connected to the first TSV and configured to block a first noise introduced to the first power supply voltage received through the first TSV
Data Source
AI summary
Disclosed is a memory device, which includes a buffer die that outputs a first power supply voltage to a first through-substrate via (e.g., through-silicon via (TSV)) and receives a small swing data signal from a second TSV generated based on the first power supply voltage, and a core die that is electrically connected to the buffer die through the first and second TSVs, includes a first cell capacitor electrically connected to the first TSV and configured to block a first noise introduced to the first power supply voltage received through the first TSV. The core die outputs the small swing data signal to the second TSV.