Memory Die ICC Peak Estimation via Substrate Temperature Sensing
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Solution Overview
Problem
Conventional methods for measuring peak supply current (ICC peak) in memory dies are inefficient, costly, and impractical for mass-scale testing, leading to sub-optimal memory die performance due to inconsistent parameter adjustments.
Innovation Solution
A memory die equipped with a temperature sensor estimates ICC peak by monitoring temperature rise during a wordline ramp-up process, allowing for on-memory die adjustment of operational parameters to achieve a target ICC peak value.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional external testing equipment is used to measure peak supply current, then measurement accuracy is improved, but testing cost and time increase significantly
Solution Approach 1:
The patent replaces external electrical measurement equipment with an on-die temperature sensing system. Instead of using conventional current measurement instruments, the invention uses a temperature sensor to detect temperature rise caused by peak supply current, thereby substituting a thermal measurement system for an electrical measurement system. This enables mass-scale testing without requiring expensive external testing equipment for each memory die.
Solution Approach 2:
The patent introduces temperature as an intermediary parameter to indirectly measure peak supply current. The temperature sensor detects temperature rise, which serves as a mediator between the electrical current and the measurement system. This intermediary approach allows current measurement through thermal effects rather than direct electrical measurement, resolving the contradiction between accuracy and scalability.
2Productivity
If on-die temperature sensing is used to estimate peak supply current, then testing cost and scalability are improved, but measurement precision may be compromised
Solution Approach 1:
The patent implements a feedback mechanism where the temperature sensor continuously monitors temperature rise during wordline ramp-up operations. The measured temperature data is fed back to adjust and refine the estimation of peak supply current. This feedback loop compensates for potential inaccuracies in the thermal-to-electrical conversion model, thereby maintaining measurement precision while enabling mass-scale testing.
Solution Approach 2:
The patent changes the measurement parameter from direct electrical current measurement to thermal parameter measurement. By measuring temperature rise instead of current directly, the system achieves scalability for mass testing. The invention compensates for the parameter change by establishing a relationship between temperature rise and peak supply current, allowing accurate estimation despite the parameter transformation.
3Reliability
If peak supply current is reduced to meet target specifications, then memory die performance is improved, but operational flexibility is reduced
Solution Approach 1:
The patent implements dynamic adjustment of operational parameters based on real-time temperature sensing during wordline ramp-up. Instead of using fixed, conservative parameter settings, the system dynamically optimizes ramp-up parameters according to actual temperature measurements. This dynamic approach maintains performance consistency by ensuring peak current targets are met while preserving operational flexibility through adaptive parameter adjustment rather than static limitations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables cost-effective, efficient estimation and adjustment of ICC peak, improving memory die performance and facilitating mass-scale data collection for consistent parameter tuning.
Implementation Method 1
A temperature sensor of the memory die may detect a temperature rise of a substrate region of the memory die during a wordline ramp-up process
Data Source
AI summary
Embodiments of the present technology provide a memory die that estimates ICC peak using cost effective (and small area) on-memory die components and processing circuitry. The memory die leverages a temperature sensor to estimate a temperature rise for a substrate region of the memory die located proximate to a wordline ramp up pump during a wordline ramp up process performed before a read operation. Based on the estimated temperature rise for the substrate region, the memory die can determine that an ICC peak of the memory die deviates from a target ICC peak value—and adjust parameters of the wordline ramp up process in a manner that brings the ICC peak of the memory die closer to the target ICC peak value.


