Memory Die Isolation Regions for Higher Cell Density

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Solution Overview

Problem

Conventional support structures for memory die manufacturing, such as structural pillars, occupy a large space, reducing memory cell density and affecting manufacturing efficiency.

Innovation Solution

Forming isolation regions with shallow voids and dielectric material deposition in trenches to provide structural support during fabrication, reducing the need for conventional support pillars.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional support structures (structural pillars) are used during fabrication, then the memory die receives adequate structural support, but the memory cell density is reduced due to the large space occupied by support pillars

Engineering Contradiction:

Improvestructural supportVSAvoidmemory cell density

Core Design Contradiction:

ReliabilityVSQuantity of substance

Solution Approach 1:

The isolation regions are segmented into two types: first isolation regions formed between regions in the second direction, and second isolation regions formed between regions in the first direction. This segmentation allows the support function to be distributed throughout the memory die rather than requiring large centralized support pillars, thereby maintaining structural support while increasing memory cell density

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent transitions from conventional vertical support pillars to planar isolation regions that extend in both first and second directions. By utilizing the planar dimensions (first and second directions) rather than relying on vertical pillars, the solution provides structural support through a distributed network of isolation regions that occupy minimal space, thus improving memory cell density while maintaining reliability

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Reliability

If conventional support structures are used, then structural support is provided, but manufacturing efficiency is reduced due to the extensive fabrication steps required

Engineering Contradiction:

Improvestructural supportVSAvoidmanufacturing efficiency

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The formation of isolation regions is merged with the existing fabrication process flow. The first and second isolation regions are formed using the same etching and deposition steps that are already part of the manufacturing process, eliminating the need for separate support structure fabrication steps. This integration improves manufacturing efficiency while maintaining the necessary structural support

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The isolation regions serve multiple functions: they provide structural support during fabrication, act as electrical isolation barriers between memory regions, and define the boundaries of memory cells. This multi-functionality eliminates the need for dedicated support structures, thereby improving manufacturing efficiency while maintaining structural integrity

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Strength

If structural pillars are used to support the memory die, then structural integrity is maintained, but the dielectric material footprint increases

Engineering Contradiction:

Improvestructural integrityVSAvoiddielectric material footprint

Core Design Contradiction:

StrengthVSArea of stationary object

Solution Approach 1:

The isolation regions are strategically positioned only where needed to provide structural support and electrical isolation, rather than using universal support pillars throughout the entire die. The first isolation regions are placed between regions in the second direction, and second isolation regions are placed between regions in the first direction, creating a localized support network that minimizes dielectric material footprint while maintaining structural integrity

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Improves memory cell density and manufacturing efficiency by minimizing the space occupied by support structures while maintaining structural integrity during etching operations.

Implementation Method 1

A dielectric material may be deposited in the first voids and the first plurality of trenches, forming first isolation regions

Methodology Applied

Scientific EffectDielectric material deposition: Deposition (physical)

Data Source

PatentUS12616007B2Isolation regions within a memory die

Publication Date: 2026.04.28 MICRON TECHNOLOGY INC

AI summary

Methods, systems, and devices for isolation regions within a memory die are described. During fabrication, memory pillars may be formed through a stack of material in a plurality regions of a memory die. In some cases, a first plurality of trenches extending in a first direction and a second plurality of trenches extending in a second direction may be formed through the stack of material (e.g., interposed between the plurality of regions). Additionally or alternatively, first voids may be formed via the first plurality of trenches, and a dielectric material may be deposited in the first voids and the first plurality of trenches, forming first isolation regions. Then, second voids may be formed via the second plurality of trenches, and a dielectric material may be deposited in the second voids and the second plurality of trenches, forming second isolation regions.