Memory Die Level Shifting for Cross-Voltage Signal Integrity
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Solution Overview
Problem
Existing memory devices face challenges in securely transmitting data between base dies and core dies operating in different voltage ranges, which affects signal integrity, power efficiency, and stability.
Innovation Solution
The proposed memory device includes a base die that shifts the voltage level of transmission data from a first voltage range to a second voltage range and transmits it through a transmission line, and a core die that generates core data by shifting the received transmission data back to the second voltage range, ensuring secure data transmission and operation stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If data are transmitted directly between base die and core die operating at different voltage ranges, then transmission simplicity is maintained, but signal integrity deteriorates due to voltage level mismatches
Solution Approach 1:
The patent introduces a level shifter circuit as an intermediary component between the base die and core die. This level shifter converts voltage levels from the first voltage range (base die) to the second voltage range (core die), enabling reliable signal transmission across voltage domains without directly connecting components operating at incompatible voltages.
Solution Approach 2:
The patent changes the voltage level parameter of transmission signals by introducing level shifter circuits that convert signals from one voltage range to another. This parameter transformation allows signals to be transmitted reliably between dies operating at different voltage ranges, resolving the signal integrity issue caused by voltage mismatches.
2Reliability
If voltage level shifting is performed for each transmission, then signal compatibility is improved, but power consumption increases due to additional switching operations
Solution Approach 1:
The patent performs voltage level shifting in advance before data transmission occurs. The level shifter circuits are configured to convert voltage levels proactively, so that when data is transmitted, the voltage compatibility is already established. This preliminary action reduces the need for dynamic switching during transmission, thereby lowering power consumption.
3Speed
If direct transmission between different voltage ranges is implemented, then transmission speed is maintained, but transmission stability deteriorates due to voltage fluctuations
Solution Approach 1:
The level shifter circuit acts as a stable intermediary that buffers and stabilizes voltage levels during transmission. By introducing this intermediate stage, the system maintains transmission speed while ensuring voltage stability, as the level shifter provides a controlled transition between voltage domains rather than allowing direct unstable coupling.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution ensures the integrity of signals, improves power efficiency, and maintains stability during data transmission between base dies and core dies operating in different voltage ranges, enhancing overall memory device performance.
Implementation Method 1
a base die configured to shift the level of base data that are driven to a first voltage range to a second voltage range
Implementation Method 2
a core die configured to generate core data by shifting a voltage level of the transmission data received through the transmission line to a second voltage range
Data Source
AI summary
A memory device includes a base die configured to transmit transmission data that are driven to a first voltage range through a transmission line based on base data, and a core die configured to generate core data by shifting a voltage level of the transmission data received through the transmission line to a second voltage range.