Nonvolatile Memory Discharge Circuit for Voltage Drop Protection

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Solution Overview

Problem

Nonvolatile memory devices face issues with uncontrolled discharge of internal circuit nodes when the supply voltage suddenly drops, potentially causing irreversible structural damage during operations like programming or erasing, due to leakage effects.

Innovation Solution

A nonvolatile memory device with a discharge circuit that connects circuit nodes to discharge terminals and an accumulation device for storing electric charge, allowing the generation of internal supply voltages when external supply voltages fall below a threshold, ensuring controlled discharge of critical nodes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the supply voltage becomes zero during operation, then the memory device operation is interrupted, but uncontrolled discharge from leakage effect causes irreversible structural damage

Engineering Contradiction:

Improvedata integrityVSAvoiduncontrolled discharge damage

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The discharge circuit is pre-configured with discharge paths connected to discharge terminals that are always ready to receive charge from circuit nodes. When supply voltage fails, the circuit automatically activates the discharge paths without waiting for external control, enabling preliminary preparedness to prevent uncontrolled discharge damage.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The discharge circuit acts as an intermediary component between the circuit nodes and ground. It provides a controlled discharge path that mediates the voltage collapse process, preventing direct uncontrolled discharge through leakage effects while maintaining safety during power failure conditions.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Productivity

If high voltages are used for programming or erasing operations, then the memory operations are effective, but uncontrolled discharge from leakage effect causes irreversible structural damage

Engineering Contradiction:

Improveoperation effectivenessVSAvoidstructural damage

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The discharge circuit is pre-configured with discharge paths connected to discharge terminals that are always ready to receive charge from circuit nodes. When supply voltage fails during high voltage operations, the circuit automatically activates the discharge paths without waiting for external control, enabling preliminary preparedness to prevent uncontrolled discharge damage.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

Inventive Principle:

Principle #24Intermediary (Mediator)

3Reliability

If the discharge circuit is always active, then controlled discharge is maintained, but energy is continuously consumed

Engineering Contradiction:

Improvecontrolled dischargeVSAvoidenergy consumption

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The discharge circuit operates dynamically based on the supply voltage state. During normal operation with sufficient supply voltage, the discharge paths remain dormant or low-activity. When supply voltage falls below the threshold, the circuit automatically transitions to an active discharge mode, providing controlled discharge only when needed to prevent damage.

Inventive Principle:

Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Prevents irreversible structural damage by maintaining controlled discharge of critical nodes even when external supply voltages are lost, ensuring data integrity and device reliability.

Implementation Method 1

an accumulation device for accumulating electric charge

Methodology Applied

Scientific EffectElectric charge storage: Capacitance

Implementation Method 2

a discharge circuit configured to selectively connect circuit nodes of the memory device to discharge terminals through corresponding discharge paths

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS9007844B2Control system for memory device

Publication Date: 2015.04.14 STMICROELECTRONICS SRL

AI summary

A nonvolatile memory device includes a discharge circuit configured to selectively connect circuit nodes to discharge terminals through corresponding discharge paths, and an accumulation device for accumulating electric charge. A driving circuit is for driving the discharge circuit in such a way to connect at least a part of such circuit nodes to the discharge terminals if the value of the external supply voltage falls below a corresponding threshold. A supply circuit is for supplying the driving circuit with an intermediate supply voltage. Each one of the intermediate supply voltages is the corresponding external supply voltage when the value of the external supply voltage is higher than the corresponding threshold, or it is an internal voltage locally generated by the supply circuit by exploiting the electric charge stored by the accumulation device when the value of the external supply voltage is lower than the corresponding threshold.