3D Memory Drain Voltage Transfer via Segmented Supply Lines
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As the number of memory cells increases in three-dimensional memory devices, the size of memory blocks grows, leading to increased time required for operation voltages to be transferred from peripheral circuits to memory blocks.
Innovation Solution
The memory device includes first and second connection regions and a cell region between them, with a first drain selection line extended within these regions. The device features bit lines positioned on the drain selection line in the cell region, and drain contacts contacting the drain selection line in both connection regions, with drain voltage supply lines connecting these contacts. This configuration allows for the efficient transfer of drain voltage through both ends of the drain selection lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of memory cells increases to achieve high-capacity data storage, then the storage capacity is improved, but the time required for operation voltages to be transferred from peripheral circuits to memory blocks increases
Solution Approach 1:
The drain selection line is divided into multiple segments with separate voltage supply lines. Instead of using a single long voltage supply line, the patent segments the voltage supply path into multiple shorter lines (first drain voltage supply line, second drain voltage supply line, etc.), each serving a specific region. This segmentation reduces the length of individual voltage supply lines and enables parallel voltage transfer to multiple regions simultaneously, thereby reducing the overall voltage transfer time while maintaining high storage capacity.
2Quantity of substance
If the size of memory blocks increases to accommodate more memory cells, then the storage capacity is improved, but the distance for voltage transfer from peripheral circuits increases
Solution Approach 1:
The patent transitions from a single-plane voltage supply architecture to a multi-layer three-dimensional structure. Voltage supply lines are arranged in different layers (first interlayer insulating layer, second interlayer insulating layer, third interlayer insulating layer) to contact drain selection lines at different positions. This dimensional change allows voltage to be supplied from multiple directions and reduces the horizontal distance voltage must travel across the memory block, enabling efficient voltage distribution in large-scale memory devices.
3Reliability
If drain voltage supply lines are positioned on different planes to reduce interference, then the signal integrity is improved, but the manufacturing complexity increases
Solution Approach 1:
The manufacturing process is segmented into distinct stages for forming different voltage supply lines at different layers. Each drain voltage supply line is formed in a separate manufacturing stage with its own interlayer insulating layer, allowing independent optimization and control of each layer's properties. This segmentation enables precise control over the position and dimensions of each voltage supply line, ensuring proper spacing and reducing interference while maintaining manageable manufacturing complexity through standardized multi-layer fabrication processes.
Data Source
AI summary
The present technology includes a memory device and a method of manufacturing the memory device. The memory device includes a memory block in which first and second connection regions and a cell region between the first and second connection regions are designated, a word line included in the memory block, a first drain selection line included in the memory block and positioned on the word line, a first drain contact contacting the first drain selection line of the first connection region, a second drain contact contacting the first drain selection line of the second connection region, and a first drain voltage supply line commonly contacting the first and second drain contacts.