Separate Memory Driver Voltages to Prevent Gate Tunneling
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Solution Overview
Problem
The use of a single gate voltage for all drivers in memory operations leads to a tunneling effect and performance degradation due to large gate-drain voltage differences, particularly affecting TSG and BSG drivers.
Innovation Solution
Implementing a modified voltage loading circuit that provides distinct gate voltages to different drivers, such as WL, TSG, and BSG drivers, using a voltage converter and source follower to avoid shared gate voltages and reduce gate-drain voltage differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single gate voltage is used for all drivers, then the device complexity is reduced, but the reliability deteriorates due to tunneling effects and performance degradation
Solution Approach 1:
The voltage loading circuit is segmented into multiple independent voltage loading units, where each unit is responsible for loading a specific gate voltage to a specific driver. This segmentation allows each unit to be optimized for its specific function, improving reliability while keeping each individual unit simple.
Solution Approach 2:
Different gate voltages are applied to different drivers based on their specific requirements. The voltage loading circuit provides localized voltage optimization for each driver (WL driver, TSG driver, BSG driver) rather than using a uniform voltage approach, thereby improving overall system reliability without excessive complexity.
2Reliability
If distinct gate voltages are provided to different drivers, then the reliability is improved by preventing tunneling effects, but the device complexity increases
Solution Approach 1:
The voltage loading circuit is divided into multiple independent voltage loading units, each handling a specific driver. This segmentation simplifies the design of each unit while achieving the overall goal of providing distinct gate voltages, thus improving reliability without excessive complexity.
Solution Approach 2:
Each voltage loading unit is designed with a universal structure that can be replicated for different drivers. The units share common functional characteristics and design patterns, which reduces overall complexity through standardization while still providing customized voltage levels for each driver type.
3Manufacturing precision
If separate drivers for word lines and select gates are implemented, then the precision of voltage control is improved, but the device complexity increases
Solution Approach 1:
The driver system is segmented into separate word line drivers and select gate drivers, with dedicated voltage loading units for each. This segmentation enables precise voltage control for each driver type while maintaining manageable complexity through modular design.
Solution Approach 2:
Each driver receives a customized voltage profile optimized for its specific function. Word line drivers receive voltages optimized for word line control, while select gate drivers receive voltages optimized for select gate control, achieving high precision without requiring a completely complex unified system.
Data Source
AI summary
Examples of the present application disclose a memory, a storage system and an electronic product. The memory comprises a control circuit, a voltage loading circuit, a first driver, and a second driver. The voltage loading circuit, in response to a block selection signal received by a control terminal, is configured to load a first voltage to a control terminal of the first driver through a first output terminal, and load a second voltage to a control terminal of the second driver through a second output terminal. Because starting voltages may be loaded by different output terminals, all the drivers do not share the same starting voltage any longer, and performance degradation caused by a tunneling effect is avoided. Therefore, based on the memory provided by the examples of the present application, the performance degradation of various drivers can be improved.