Semiconductor Memory Driver Leakage Current Reduction
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Solution Overview
Problem
The increasing integration of semiconductor memory devices leads to higher power consumption due to increased leakage current in decoder drivers, which is challenging to manage with existing technologies, especially in low-power applications like mobile devices, where high power consumption reduces product competitiveness and can cause DC failures.
Innovation Solution
The driver of the semiconductor memory device controls the supply of heterogeneous power-supply voltages in response to a power-down signal to reduce transistor channel-off leakage current, using a drive controller to selectively provide different voltage levels to a node, which is then used by input and output drivers to manage leakage current without the need for additional transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of row decoders and column decoders is increased to support higher integration degree, then the memory capacity and functionality are improved, but the leakage current and power consumption are significantly increased
Solution Approach 1:
The driver circuit is divided into multiple stages (first driver stage, second driver stage, third driver stage) with each stage having independent control over its transistors. This segmentation allows selective power supply control to different parts of the circuit, enabling leakage current reduction in inactive stages while maintaining functionality in active stages.
Solution Approach 2:
The patent changes the power supply voltage parameter dynamically by controlling the power supply voltage control signal. When leakage current is detected or in standby mode, the power supply voltage is reduced or cut off to specific transistor gates, thereby reducing leakage current while maintaining normal operation during active periods.
2Loss of energy
If blocking power source of transistor is used to reduce leakage current, then power consumption is reduced, but driver size must be much larger and smooth power supply becomes difficult
Solution Approach 1:
The patent implements dynamic control of power supply voltage to transistor gates through the power supply voltage control signal. Instead of static blocking, the system dynamically adjusts power supply based on operational mode (active vs. standby), reducing leakage current without requiring larger driver size or complex blocking structures.
Solution Approach 2:
The power supply voltage control signal serves multiple functions: it controls normal operation during active mode, reduces leakage current during standby mode, and prevents DC failures. This multi-functionality achieves leakage reduction without adding complex dedicated blocking structures or increasing driver size.
3Loss of energy
If blocking power source is used to reduce leakage current, then power consumption decreases, but DC failure occurs and productivity is reduced
Solution Approach 1:
The patent implements periodic control of power supply voltage based on operational mode. During active periods, full power is supplied for normal operation; during standby periods, power is reduced or cut off to reduce leakage. This periodic action prevents DC failure by ensuring proper voltage levels during active operation while reducing leakage during idle periods.
Solution Approach 2:
The system uses leakage current detection to control the power supply voltage control signal. When leakage current exceeds a threshold or during standby mode, the control signal adjusts power supply voltage accordingly. This feedback mechanism ensures reliability by maintaining proper voltage levels during active operation while reducing leakage during standby, preventing DC failures.
Data Source
AI summary
A driver of a semiconductor memory device and driving method thereof is disclosed, which relates to a technology for reducing consumption of a leakage current not required for a driver circuit of a semiconductor memory device. The driver of the semiconductor memory device includes a drive controller configured to selectively provide a first voltage and a second voltage, that have different levels in response to a power-down signal, to a first node; an input driver configured to selectively output a voltage received from the first node in response to a decoding signal; and an output driver configured to be driven in response to an output voltage of the input driver.