Memory Device Partial Read via Dummy Word Lines

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Solution Overview

Problem

Current memory devices inefficiently perform read operations for partial pages by sensing entire pages, leading to suboptimal data transfer in response to read requests for specific data portions.

Innovation Solution

Incorporating a memory device with a memory cell array connected to dummy word lines and a voltage generator that applies specific voltages to selectively activate memory cells, allowing for efficient partial read operations by controlling the application of pass and read voltages to dummy and selected word lines.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If the memory device performs a read operation for a partial page by sensing an entire page, then the read request for specific data portions can be fulfilled, but the data transfer efficiency deteriorates due to unnecessary data transfer

Engineering Contradiction:
Improveread operation capabilityVSAvoiddata transfer efficiency
Core Design Contradiction:
Ease of operationVSProductivity

Solution Approach 1:

The memory cell array is divided into multiple regions (first region, second region, third region, fourth region) along the word line direction. Dummy word lines are introduced to separate these regions, enabling selective reading of specific regions by applying pass voltages to dummy word lines corresponding to unwanted regions, thus avoiding unnecessary data transfer while fulfilling partial page read requests

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Dummy memory cells connected to dummy word lines serve as intermediary elements between the selected word line and the bit lines. By controlling the voltage state of dummy word lines, the patent enables selective activation of dummy memory cells to block or enable signal paths, thereby controlling which regions' data are transferred to the output without reading entire page data

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If dummy word lines and dummy memory cells are introduced to enable selective region reading, then partial read efficiency is improved, but device complexity increases

Engineering Contradiction:
Improvepartial read efficiencyVSAvoidmemory cell array structure
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The dummy word lines and dummy memory cells serve multiple functions: they act as region separators, voltage control elements for selective activation, and intermediaries for controlling data flow. This multi-functionality reduces the need for additional complex control mechanisms, as the same dummy structures perform multiple roles in enabling efficient partial page reads

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent combines the functions of region separation and selective reading control into a single integrated structure using dummy word lines and dummy memory cells. Rather than adding separate control circuits or complex decoding logic, the dummy memory cells themselves perform both the separation and the selective activation function, merging multiple functions into unified structures

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS20240176494A1Memory device performing read operation and method of operating the same
Publication Date: 2024.05.30 SK HYNIX INC
  • US20240176494A1 patent drawing
  • US20240176494A1 patent drawing
  • US20240176494A1 patent drawing

AI summary

A memory device includes a memory cell array comprising a plurality of regions. Each region is a segment or portion of a page. Each region is connected to dummy word lines and word lines. A voltage generator provides a read voltage for reading a memory cell connected to a selected word line, and provides a pass voltage for turning on a dummy memory cell included in a region corresponding to the selected region. A read operation controller controls the voltage generator to apply the pass voltage to the dummy word lines and apply the read voltage to the selected word line.