Semiconductor Memory Electrode Antioxidant Layer
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Solution Overview
Problem
Conventional three-dimensionally stacked semiconductor memory devices face issues with increased resistance and deterioration of charge retention characteristics due to oxidation of low-resistance electrode layers, affecting memory performance.
Innovation Solution
Incorporating an electrode antioxidant layer with high dielectric constant metal oxide on the side surfaces of electrode layers, which is selectively oxidized to form a charge block layer, thereby suppressing oxidation and maintaining low resistance while enhancing charge storage and retention capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the electrode layer with low resistance is oxidized to improve charge storage capability, then the charge retention characteristics are improved, but the resistance of the electrode layer increases
Solution Approach 1:
The electrode structure is segmented into two distinct parts: the original low-resistance electrode layer and a newly formed oxide layer. This segmentation allows each part to fulfill different functions - the electrode layer maintains electrical conductivity while the oxide layer provides charge storage capability, thereby resolving the contradiction between low resistance and charge retention.
Solution Approach 2:
The invention creates a composite structure combining the metallic electrode layer with its oxidized form. This composite configuration enables the system to simultaneously exhibit both the electrical conductivity of the metal and the charge storage properties of the oxide, effectively addressing the technical contradiction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents the increase in interconnection resistance and improves data retention characteristics by concentrating the electric field and suppressing charge diffusion, leading to stable memory performance.
Implementation Method 1
a portion of the electrode layer exposed in an inner surface of the hole is sometimes oxidized
Implementation Method 2
concentrating the electric field and suppressing charge diffusion
Data Source
AI summary
A semiconductor memory device according to an embodiment, includes a stacked body, a semiconductor member, a charge storage layer, a charge block layer and an electrode antioxidant layer. The stacked body includes a plurality of electrode layers stacked separated from each other and an inter-electrode insulating layer between the electrode layers. The semiconductor member extends in a stacking direction of the stacked body and penetrates the stacked body. The tunnel insulating layer is provided on a side surface of the semiconductor member. The charge storage layer is provided on a side surface of the tunnel insulating layer. The charge block layer is provided on a side surface of the charge storage layer and contains oxygen. The electrode antioxidant layer is provided between the charge block layer and the electrode layer and has a composition different from that of the electrode layer.