Semiconductor Memory Electrode Spacing for Misprogramming
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Solution Overview
Problem
Semiconductor memory devices face challenges in maintaining stable operations due to misprogramming in unselected cells, which affects the reliability and stability of data storage.
Innovation Solution
The semiconductor memory device design includes a stacked body with specific electrode spacings, where the first spacing between first electrodes is wider than the third spacing between third electrodes, and the second spacing between second electrodes is wider than the third spacing, stabilizing programming by suppressing charge injection into unselected cells through controlled electric field management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If uniform spacing is used between all electrodes, then manufacturing is simplified, but charge injection into unselected cells occurs causing misprogramming
Solution Approach 1:
The patent applies different spacing configurations to different regions of the electrode structure. Specifically, a first spacing is used between first electrodes, a second spacing is used between second electrodes, and a third spacing is used between third electrodes, where the first and second spacings are wider than the third spacing. This local differentiation suppresses charge injection into unselected cells while maintaining manufacturing feasibility.
2Reliability
If wider spacing is used between first and second electrodes, then charge injection into unselected cells is suppressed, but device area increases
Solution Approach 1:
The patent strategically places wider spacing (first and second spacings) only where needed to suppress charge injection into unselected cells, while using narrower spacing (third spacing) in other regions. This localized approach to spacing differentiation reduces the overall area increase compared to uniformly wide spacing, while still achieving the reliability improvement of suppressing misprogramming.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances operational stability by reducing misprogramming in unselected cells, improving the reliability of data storage and increasing the difference in threshold voltage between selected and unselected cells, thereby enhancing the boost characteristic.
Implementation Method 1
stabilizing programming by suppressing charge injection into unselected cells through controlled electric field management
Data Source
AI summary
According to one embodiment, a semiconductor memory device includes a stacked body including a first stacked region, and a first structure body. The first stacked region includes first and second selection gate electrodes, first electrodes arranged in a first direction and provided between the first and second selection gate electrodes, second electrodes arranged in the first direction and provided between the second selection gate electrode and the first electrodes, and third electrodes arranged in the first direction and provided between the first electrodes and the second electrodes. A first spacing between two mutually-adjacent first electrodes is wider than a third spacing between two mutually-adjacent third electrodes. A second spacing between two mutually-adjacent second electrodes is wider than the third spacing.