Memory Device Error Address Backup to Non-Volatile Storage
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Solution Overview
Problem
Semiconductor memory devices are prone to defective or damaged memory cells, leading to reduced reliability and lifespan, as existing error correction codes cannot effectively handle recurring errors in memory segments.
Innovation Solution
A method for reading and writing that differentiates memory cells with data errors in real-time by storing address information in a preset memory space and backing it up to a non-volatile memory cell, preventing re-storage and improving operational speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If error correction codes are used to handle defective memory cells, then data reliability is improved, but recurring errors in memory segments cannot be effectively handled and device complexity increases
Solution Approach 1:
The patent segments memory management into two parts: volatile memory for active data storage and non-volatile memory for storing address information of defective cells. This segmentation allows the system to handle errors by comparing addresses against the stored defective address information, rather than relying solely on complex error correction codes for all operations.
Solution Approach 2:
The patent performs preliminary action by pre-storing address information of defective memory cells in non-volatile memory during manufacturing or initial operation. This allows the system to proactively identify and avoid defective addresses before actual data operations occur, preventing recurring errors without needing complex real-time correction mechanisms.
2Reliability
If all address information is continuously backed up to non-volatile memory, then reliability is improved, but operational speed decreases
Solution Approach 1:
The patent applies local quality by selectively storing only the address information of defective memory cells in non-volatile memory, rather than continuously backing up all address information. This selective approach maintains reliability by focusing on problematic areas while preserving operational speed by minimizing unnecessary write operations to non-volatile memory.
Solution Approach 2:
The patent discards the approach of continuous full backup and instead recovers efficiency by implementing on-demand backup only when errors are detected. The system monitors memory operations and backs up address information only when defective cells are identified, balancing reliability improvement with operational speed maintenance.
3Device complexity
If defective memory cells are not differentiated, then device complexity is low, but data errors occur and lifespan is reduced
Solution Approach 1:
The patent implements self-service by enabling the memory system to automatically identify and mark defective cells during initial operation or manufacturing. The system services itself by generating and storing the address information of defective cells without requiring external intervention, then uses this information to prevent future data errors at minimal complexity cost.
Data Source
AI summary
The embodiments provide a method for reading and writing and a memory device. The method includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; and storing the address information pointed to by the read command into a preset memory space if an error occurs in the data to be read out, and backing up the address information stored in the preset memory space into a non-volatile memory cell according to a preset rule.