Memory Error Check Control Circuit for Bad Section Management
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Solution Overview
Problem
As semiconductor memory devices increase in capacity, it becomes challenging to fabricate memory devices without defective memory cells, leading to the need for redundancy memory cells and error correction circuits to address errors during read and write processes.
Innovation Solution
A method and system for operating a memory that includes error checking, detecting bad sections, stopping and resuming the error check operation based on the number of detected bad sections, and transferring this information to a memory controller to manage error correction and data integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If error check operation continues without stopping, then all bad sections can be detected, but memory bandwidth is wasted and operation time increases
Solution Approach 1:
The patent applies partial action by stopping the error check operation after detecting a predetermined number of bad sections. Instead of checking all memory sections exhaustively, the system performs error checking on a limited portion (until the threshold is reached), which balances detection completeness with operational efficiency. This resolves the contradiction by accepting partial detection coverage in exchange for improved productivity.
Solution Approach 2:
The system implements feedback by monitoring the number of detected bad sections and using this information to control the continuation or termination of the error check operation. When the predetermined number of bad sections is detected, the system provides feedback to stop further checking, thereby optimizing resource usage while maintaining adequate error detection capability.
2Productivity
If error check operation is stopped early, then memory operation efficiency is improved, but detection completeness decreases
Solution Approach 1:
The patent changes the parameter of error check operation from continuous to conditional based on the detected bad section count. By introducing a threshold parameter (predetermined number of bad sections), the system dynamically adjusts the extent of error checking, stopping when the threshold is reached. This parameter-based control resolves the contradiction by optimizing the trade-off between productivity and detection completeness.
3Reliability
If bad section information is stored in memory, then error correction capability is improved, but memory capacity for useful data decreases
Solution Approach 1:
The patent segments memory functionality into distinct components: error check operation control circuit, bad section detecting circuit, and bad section storing circuit, separate from the main memory core. This segmentation allows error management functions to operate independently without consuming significant capacity from the usable memory, resolving the contradiction between reliability and usable capacity.
Solution Approach 2:
The system introduces an intermediary bad section storing circuit that acts as a buffer between the error detection process and the main memory. This intermediary structure stores bad section addresses separately, enabling error correction functionality while minimizing the impact on usable memory capacity. The intermediary layer resolves the contradiction by providing error management capability without directly reducing main memory availability.
Data Source
AI summary
A method for operating a memory includes: performing an error check operation; detecting N bad sections during the error check operation, where N is an integer equal to or greater than 1; stopping the error check operation in response to the detecting of the N bad sections; transferring information on the N bad sections to a memory controller; and resuming the error check operation in response to the transferring of the information on the N bad sections to a memory controller.