Memory Error Correction Circuit Blocks Multi-Bit Write-Back
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Solution Overview
Problem
Semiconductor memory devices face errors during data writing, reading, or storage, leading to single-bit or multi-bit errors, which can be incorrectly corrected by error correction circuits, resulting in error accumulation.
Innovation Solution
A method and system that includes a memory controller and device with an error correction circuit that detects errors, corrects single-bit errors, and blocks write-back of corrected data when multi-bit errors are detected to prevent further errors during the scrubbing operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If error correction circuit corrects all detected errors, then data accuracy improves, but multi-bit errors are incorrectly corrected causing error accumulation
Solution Approach 1:
The error correction circuit changes its correction behavior based on the error type parameter. When a multi-bit error is detected, the circuit changes from correcting errors to blocking write-back operations, preventing incorrect corrections while maintaining accurate correction for single-bit errors
2Reliability
If error correction is performed on all errors, then data integrity improves, but incorrect correction of multi-bit errors occurs
Solution Approach 1:
The system changes the correction parameter based on error detection results. For multi-bit errors, the write-back block parameter is activated to prevent incorrect corrections, while single-bit errors continue to be corrected normally, ensuring correction accuracy is maintained
3Reliability
If scrubbing operation continuously corrects errors, then data reliability improves, but error accumulation occurs due to multi-bit error miscorrection
Solution Approach 1:
The system converts the harmful effect of multi-bit error detection into a beneficial blocking action. By detecting multi-bit errors and blocking write-back operations, the system prevents incorrect corrections from causing error accumulation, while still maintaining the beneficial scrubbing function for single-bit errors
Data Source
AI summary
A method of operating a memory device is provided. The method includes: receiving a first command from a controller; activating a page of a memory cell array based on the first command; reading data of the activated page; detecting an error from the read data; correcting the detected error to generate error correction data; writing back the error correction data to the activated page in based on the detected error being a single-bit error; and blocking write-back of the error correction data to the activated page based on the detected error being a multi-bit error.


