Memory Subsystem Error Recovery via Optimized Read Voltage
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Solution Overview
Problem
Existing memory sub-systems face challenges in efficiently recovering data due to increasing errors over time, especially in mobile computing architectures, where error handling processes are resource-intensive and often result in suboptimal read levels, leading to decreased performance, particularly at end-of-life testing.
Innovation Solution
The implementation of an error recovery operation component that determines an optimized read offset voltage by analyzing data reliability parameters, such as raw bit error rate, and performs auto read calibration to set an optimized read voltage, thereby improving memory sub-system performance by optimizing read voltages applied to memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If error handling processes are performed using existing memory sub-systems, then data recovery is attempted, but the processes are resource-intensive and result in suboptimal read levels
Solution Approach 1:
The system performs preliminary actions by determining an optimized read offset voltage before attempting error recovery operations. This pre-optimization of read voltage levels ensures that subsequent error handling processes operate at peak efficiency, reducing resource consumption while improving data recovery capability.
Solution Approach 2:
The invention changes the read voltage parameter by determining an optimized read offset voltage based on data reliability parameters. This parameter optimization allows the error handling processes to operate more efficiently, resolving the contradiction between reliable data recovery and performance efficiency.
2Reliability
If existing error handling processes are used, then data recovery is attempted, but suboptimal read levels lead to decreased performance especially at end-of-life testing
Solution Approach 1:
The system implements feedback by determining data reliability parameters and using this information to establish an optimized read offset voltage. This feedback loop ensures that read levels are continuously optimized based on actual data reliability conditions, improving both error recovery capability and read level accuracy.
Solution Approach 2:
The invention dynamically adjusts the read voltage parameter based on determined data reliability parameters. This parameter change strategy ensures that the system operates at optimal read levels regardless of memory sub-system age or condition, resolving the contradiction between error recovery capability and read level accuracy.
3Productivity
If read voltages are not optimized, then memory operations continue, but bit error rates increase and low-density parity-check throughput decreases
Solution Approach 1:
The system performs preliminary optimization of read voltages before memory operations proceed. By establishing an optimized read offset voltage in advance based on data reliability parameters, the system ensures both operational continuity and low bit error rates, resolving the contradiction between productivity and reliability.
Data Source
AI summary
A method includes determining whether a data reliability parameter associated with a set of memory cells is greater than a threshold data reliability parameter and in response to determining that the data reliability parameter is greater than the threshold data reliability parameter, performing an error recovery operation. The method further includes, subsequent to performing the error recovery operation, determining whether the data reliability parameter associated with the set of memory cells is less than the threshold data reliability parameter and in response to determining that the data reliability parameter is less than the threshold data reliability parameter, setting an offset associated with the error recovery operation as a default read voltage for the set of memory cells.