Nonvolatile Memory Page Reliability Determination via Fail Bit Counting
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Solution Overview
Problem
Existing data storage devices lack an efficient method to determine the reliability of data pages during write operations, which can lead to data integrity issues due to unaccounted fail bits.
Innovation Solution
A nonvolatile memory device with a buffer to store data, a fail bit counter to count fail bits, and a state determination unit to assess the reliability of pages based on these counts, ensuring data is written to alternative pages if the reliability threshold is not met.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If data is written to memory pages without reliability determination, then write operation speed is maintained, but data integrity deteriorates due to unaccounted fail bits
Solution Approach 1:
The patent performs fail bit counting and reliability determination before the write operation is completed. The state determination unit assesses page reliability by counting fail bits in advance, allowing the system to identify unreliable pages before data is written, thus preventing data integrity issues while maintaining efficient write operations.
Solution Approach 2:
The patent implements a feedback mechanism where the state determination unit continuously monitors page reliability by counting fail bits and provides this information back to the control logic. This feedback enables dynamic adjustment of write operations, allowing the system to redirect data from unreliable pages to reliable pages, thereby maintaining both data integrity and write efficiency.
2Reliability
If fail bit counting and reliability determination are performed for every page, then data integrity is improved, but device complexity increases
Solution Approach 1:
The patent divides the reliability determination process into separate functional units: a fail bit counter unit that counts unreliable bits and a state determination unit that assesses page reliability based on the count. This segmentation allows each unit to perform its specific function efficiently, reducing overall system complexity while maintaining comprehensive reliability determination.
Solution Approach 2:
The memory device performs self-diagnosis by automatically counting fail bits and determining page reliability without external intervention. The state determination unit uses internally generated fail bit counts to assess page quality, enabling the device to self-manage data integrity without requiring complex external control mechanisms.
3Quantity of substance
If unreliable pages are used for data storage, then storage capacity is maximized, but data loss risk increases
Solution Approach 1:
The control logic receives feedback from the state determination unit about page reliability status and uses this information to make intelligent write decisions. When unreliable pages are detected through fail bit counting, the control logic redirects write operations to reliable pages, ensuring data is stored only in pages that meet reliability thresholds while still utilizing available storage capacity efficiently.
Solution Approach 2:
The system performs preliminary reliability assessment by counting fail bits before data is written to any page. This advance determination allows the control logic to identify suitable pages for data storage in advance, ensuring that data is only written to reliable pages while maximizing the use of available storage capacity through intelligent page selection.
Data Source
AI summary
A nonvolatile memory device includes a plurality of memory cells; a buffer suitable for storing data to be written in a page of memory cells; a fail bit counter suitable for counting fail bits among the data stored in the buffer; and a state determination unit suitable for determining a reliability of the page, based on a counted number of fail bits.