Semiconductor Memory Device Fail Data Management

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Solution Overview

Problem

Nonvolatile memory devices face challenges in maintaining data integrity and tracking write operations when write failures exceed a predetermined number of attempts, leading to potential data loss and address mismanagement.

Innovation Solution

A semiconductor memory device with a controller that retains and outputs write data and addresses even after a write fault occurs, utilizing a memory cell array, data latches, and address latches to manage successful and failed write operations, including a fail address and data output mechanism.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If write operations are executed multiple times to ensure data integrity, then reliability improves, but the risk of write faults increases when failure thresholds are exceeded

Engineering Contradiction:
Improvedata integrityVSAvoidwrite fault occurrence
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent segments the address space into multiple address latches (first address latch, second address latch) and data into multiple data latches (first data latch, second data latch). This segmentation allows the system to track successful and failed write operations separately, enabling reliable data integrity management while preventing write faults from affecting the entire memory system.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a controller as an intermediary that manages the write operation process. The controller monitors write attempts, tracks failure counts, and determines when write faults have occurred. This intermediary layer prevents uncontrolled retry operations that could lead to write faults while maintaining data integrity through proper error handling.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If write failures are tracked and restricted to prevent write faults, then reliability improves, but data loss occurs when write attempts exceed predetermined limits

Engineering Contradiction:
Improvewrite operation managementVSAvoidwrite data loss
Core Design Contradiction:
ReliabilityVSLoss of information

Solution Approach 1:

The patent performs preliminary actions by maintaining address latches and data latches that record write operation status before write faults occur. The first address latch and first data latch store information about successful writes, while the second address latch and second data latch store information about failed writes. This preliminary recording ensures that data is preserved and can be recovered even when write attempts exceed predetermined limits.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent provides beforehand cushioning by implementing error handling mechanisms that activate before data loss occurs. The controller monitors write failure counts and uses the separate address and data latches to cushion against potential data loss by preserving write information even when write faults are determined, allowing for data recovery and preventing information loss.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Ease of operation

If CPUs or memory controllers track write data and addresses, then data management improves, but complexity increases in tracking write faults and maintaining data integrity

Engineering Contradiction:
Improvewrite data trackingVSAvoidcontroller complexity
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The patent segments the tracking function into distinct address latches and data latches, with the controller managing each latch separately. This segmentation simplifies the controller's complexity by providing clear, organized structures for tracking successful and failed writes, making the system easier to operate while maintaining comprehensive data integrity monitoring.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS10553276B2Semiconductor memory device
Publication Date: 2020.02.04 KIOXIA CORP
  • US10553276B2 patent drawing
  • US10553276B2 patent drawing
  • US10553276B2 patent drawing

AI summary

A semiconductor memory device includes a memory cell array, a first data latch that retains a write unit of data to be written to the memory cell array, a first address latch that retains a write address indicating a write target destination for the write unit of data in the first data latch, a second data latch that retains fail data that is a write unit of data that has failed to be written to the memory cell array, and a second address latch that retains a fail address indicating a write target destination for the fail data. A controller is configured to output the fail address from the second address latch in response to a first output command requesting output of the fail address and to output the fail data from the second data latch in response to a second output command requesting an output of the fail data.