Memory Fault Notification via Resistor-Coupled Circuit Node

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Solution Overview

Problem

Memory devices often fail to promptly notify host devices of internal faults, leading to unreliable operation and potential errors due to undetected faults.

Innovation Solution

A memory device configures a circuit node with resistors to detect faults, performs recalibration operations, and outputs a fault indication to the host device, ensuring timely notification of internal faults.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If memory devices do not implement fault notification mechanisms, then device complexity is reduced, but reliability deteriorates due to undetected faults

Engineering Contradiction:
Improvefault detection reliabilityVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the fault detection function with the existing read operation by using the same read circuitry to perform both data reading and fault detection. The fault detection is integrated into the read process without requiring separate dedicated fault detection circuits, thus improving reliability while minimizing the increase in device complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The read circuit is designed to serve multiple functions: it reads data from memory cells and simultaneously detects faults in other memory cells. This multi-functionality allows the same hardware components to perform both operational and diagnostic tasks, reducing the need for additional specialized fault detection hardware.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If fault detection is performed during read operations, then reliability is improved through timely fault notification, but productivity decreases due to read operation delays

Engineering Contradiction:
Improvefault notification timelinessVSAvoidread operation speed
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The system performs fault detection in advance during read operations before the read completes, allowing the host to be notified of faults proactively. This preliminary fault detection enables the system to maintain reliability by identifying issues before they affect subsequent operations, while the fault notification mechanism ensures timely alerting without requiring separate detection passes.

Inventive Principle:
Principle #10Preliminary action

3Loss of information

If no fault output is provided to host devices, then device complexity is minimized, but loss of information increases due to undetected faults

Engineering Contradiction:
Improvefault information transmissionVSAvoidoutput signal complexity
Core Design Contradiction:
Loss of informationVSDevice complexity

Solution Approach 1:

The patent uses the existing read data lines as an intermediary channel to transmit fault information to the host device. Instead of requiring separate dedicated fault output pins, the system repurposes the read data lines to carry fault status information, thereby transmitting necessary fault information without adding significant complexity to the output interface.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20250210122A1Memory fault notification
Publication Date: 2025.06.26 MICRON TECHNOLOGY INC
  • US20250210122A1 patent drawing
  • US20250210122A1 patent drawing
  • US20250210122A1 patent drawing

AI summary

Methods, systems, and devices for memory fault notification are described. A memory device may receive a configuration corresponding to a circuit node of the memory device, where the circuit node may be selectively coupled with a set of resistors. The memory device may determine a fault condition and couple the circuit node to at least a first resistor based on determining the fault condition. The memory device may bias the circuit node to a first voltage value that satisfies a voltage threshold based on coupling the circuit node to the first resistor. The memory device may output an indication of a fault state to notify a host device that a fault has been detected.