3D Memory Film Sidewalls for Discrete Charge Storage Integration
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Solution Overview
Problem
Existing three-dimensional memory devices face challenges in efficiently integrating discrete charge storage elements and achieving optimal structural configurations for enhanced performance and scalability.
Innovation Solution
The formation of a three-dimensional memory device involves an alternating stack of insulating and conductive layers with memory openings filled by structures comprising vertical semiconductor channels and memory films with specific sidewall configurations, including straight inner cylindrical sidewalls and laterally-undulating outer sidewalls with protrusions, and discrete charge storage elements spaced apart by lateral protrusions of insulating layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional three-dimensional memory structures are used, then manufacturing is simpler, but integration of discrete charge storage elements is inefficient
Solution Approach 1:
The memory structure is segmented into discrete charge storage elements separated by insulating layers, allowing independent control and efficient integration while maintaining manufacturability through systematic layer deposition processes
Solution Approach 2:
The patent transitions from planar to three-dimensional vertical stacking of charge storage elements, enabling higher integration density and improved productivity by utilizing the vertical dimension for element integration
2Device complexity
If simple memory structures are used, then device complexity is lower, but scalability and performance are limited
Solution Approach 1:
Multiple charge storage elements are nested within a single memory device structure through vertical stacking, with each element separated by insulating layers, achieving high scalability and performance while managing complexity through hierarchical organization
Solution Approach 2:
The memory device employs composite structures combining conductive charge storage elements with insulating separator layers, creating a multi-material system that enhances performance and scalability while providing clear structural definition to manage complexity
3Productivity
If charge storage elements are densely integrated, then productivity increases, but structural integrity may be compromised
Solution Approach 1:
Insulating layers are strategically positioned between charge storage elements to provide localized electrical isolation and structural support, enabling high integration density while preserving overall structural integrity through targeted reinforcement
Solution Approach 2:
Insulating layers serve as intermediary elements between charge storage structures, providing both electrical isolation to maintain signal integrity and mechanical support to preserve structural stability under high-density integration conditions
Data Source
AI summary
A memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and a memory film. The memory film includes a memory material layer having a straight inner cylindrical sidewall that vertically extends through a plurality of electrically conductive layers within the alternating stack without lateral undulation and a laterally-undulating outer sidewall having outward lateral protrusions at levels of the plurality of electrically conductive layers.