Configurable Reference Resistor for Accurate Memory Fuse Status
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Solution Overview
Problem
The existing methods for determining the status of fuse elements in memory devices face challenges due to variations in resistance values caused by process variants, leading to incorrect identification and requiring costly restarts of the manufacturing process to adjust reference resistors.
Innovation Solution
A semiconductor circuit and device with a configurable reference resistor unit that includes a resistor, a transistor, and a configurable unit, allowing for adjustable resistance to match the fuse element's resistance, and a latch circuit to read status signals, eliminating the need for additional photomasks and reducing production time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a reference resistor is modified to address fuse resistance variations, then measurement precision is improved, but device complexity and manufacturing cost increase due to additional photomasks and manufacturing process restart
Solution Approach 1:
The reference resistor is transformed from a fixed value component to a dynamically adjustable component through the addition of a transistor. The transistor allows the reference resistor's effective resistance to be changed between different states (e.g., high resistance and low resistance modes), enabling adaptation to fuse resistance variations without modifying the physical resistor structure or restarting manufacturing processes.
Solution Approach 2:
The invention changes the resistance parameter of the reference resistor by controlling the transistor's on/off state or resistance value. This parameter change allows the reference resistor to match the actual resistance characteristics of fuses with different resistance values, improving measurement precision while avoiding the need for additional photomasks or manufacturing process modifications.
2Measurement precision
If a reference resistor is modified to address fuse resistance variations, then measurement precision is improved, but loss of time increases due to manufacturing process restart
Solution Approach 1:
The transistor is pre-integrated into the reference resistor structure during the original manufacturing process. This preliminary action ensures that the reference resistor can be dynamically adjusted later without requiring manufacturing process restarts, thereby saving time while maintaining the ability to improve measurement precision.
Solution Approach 2:
The dynamic nature of the transistor-controlled reference resistor allows for post-manufacturing adjustment of resistance values. This eliminates the need to restart manufacturing processes to modify reference resistors, significantly reducing time loss while maintaining measurement precision.
3Adaptability or versatility
If process variants cause fuse resistance to deviate from desired values, then manufacturing precision deteriorates, but adaptability could be improved through configurable reference resistance
Solution Approach 1:
The reference resistor is made dynamic through transistor integration, allowing it to adapt its resistance value to match fuses with different resistance characteristics caused by process variants. This adaptability compensates for manufacturing precision variations without requiring stricter control over fuse resistance during manufacturing.
Solution Approach 2:
The configurable unit changes the reference resistor's resistance parameter based on detected fuse characteristics. This parameter adjustment enables the system to adapt to process variants and maintain accurate fuse status identification even when manufacturing precision varies.
Data Source
AI summary
The present disclosure provides a method for determining status of a fuse element of a memory device. The method includes providing the memory device including a first terminal and a second terminal and applying a first power signal on the first terminal of the semiconductor device. The memory device includes a configurable reference resistor unit electrically coupled to the fuse element. The method also includes obtaining an evaluation signal at the second terminal of the memory device and identifying the evaluation signal to determine whether the memory device is redundant. The configurable reference resistor unit includes a first resistor, a first transistor connected in parallel with the first resistor, and a first configurable unit connected to a gate of the first transistor. The first configurable unit is configured to generate a first configurable signal to turn on the first transistor.


