Memory Fuse Layout for Post-Assembly Weak Bit Repair
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Detecting and repairing weak bits in memory devices after assembly is challenging due to the difficulty in obtaining high voltage for blowing fuses, especially when the devices are mounted on a printed circuit board.
Innovation Solution
A semiconductor device design incorporating a doped structure, dielectric layers, and insulating structures with fuses that allow for the creation of high voltage and high current paths without affecting the main array, enabling post-assembly testing and repair.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the memory device is assembled and mounted on a printed circuit board, then the device achieves miniaturization and integration, but it becomes difficult to obtain high voltage for burning or blowing out the fuse
Solution Approach 1:
The patent divides the semiconductor device into distinct functional regions: a main array region and a spare array region. The fuse structures are specifically located in the spare array region, which is electrically isolated from the main array. This segmentation allows the fuse operation (requiring high voltage) to be performed independently without affecting the main array, and enables post-assembly testing and repair capabilities while maintaining the miniaturized integrated structure.
2Reliability
If the fuse is blown out to repair weak bits, then the functional integrity is improved, but the high voltage required for fuse operation may affect the main array
Solution Approach 1:
The patent extracts the fuse structures from the main array and places them in a separate spare array region. This physical and electrical separation ensures that when high voltage is applied to blow out fuses for repairing weak bits, the main array is not affected by the high voltage stress. The spare array acts as an isolated testing and repair zone, protecting the main array from harmful high voltage effects while enabling functional integrity restoration.
Solution Approach 2:
The patent introduces a substrate as an intermediary element between the fuse structures and the main array. The substrate provides electrical isolation and acts as a mediator that allows high voltage to be applied to the fuse structures without directly affecting the main array. This intermediary structure enables safe fuse operation for repair purposes while protecting the main functional array from high voltage damage.
3Ease of repair
If post-assembly testing and repair are implemented, then the ease of repair is improved, but the device complexity increases
Solution Approach 1:
The patent merges the testing and repair functionality directly into the device structure by incorporating fuse structures and spare array regions during the semiconductor manufacturing process. Rather than adding external testing equipment or complex repair mechanisms, the fuse structures are integrated into the device itself, enabling post-assembly testing and repair capabilities through standard semiconductor fabrication techniques. This merging approach enables ease of repair without significantly increasing overall device complexity.
Data Source
AI summary
A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a lower supporting frame; an upper supporting frame, and a capacitor component. The lower supporting frame is disposed over the substrate. The upper supporting frame is disposed over and spaced apart from the lower supporting frame. The capacitor component is disposed over the substrate. The capacitor component includes a lower electrode having a noncontinuous sidewall abutting the lower supporting frame.