3D Memory Gate Contact Support Layout Against Bending

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Solution Overview

Problem

The stability of the manufacturing process for three-dimensional semiconductor memory devices deteriorates as the number of stacked memory cells increases, affecting the degree of integration and reliability.

Innovation Solution

A semiconductor memory device with a stack structure including a cell array region, contact regions, cell plugs, conductive gate contacts, and support structures arranged in a circular pattern around the conductive gate contacts to enhance structural support and reduce bending risks during manufacturing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the stacked number of memory cells is increased to improve the degree of integration, then the integration density is improved, but the manufacturing process stability deteriorates

Engineering Contradiction:

Improvestacked number of memory cellsVSAvoidmanufacturing process stability

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

The patent applies preliminary action by forming support structures (insulating structures and mandrels) before forming the conductive gate contact. These support structures are prepared in advance to prevent bending of the conductive gate contact during subsequent manufacturing processes, thereby maintaining manufacturing stability while enabling high-density stacking of memory cells

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent introduces intermediary support structures (insulating structures and mandrels) that act as mediators between the stack structure and the conductive gate contact. These intermediary elements provide mechanical support and prevent direct bending of the conductive gate contact, allowing both high integration density and manufacturing stability to be achieved

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If support structures are added to prevent bending of conductive gate contact, then manufacturing stability is improved, but device complexity increases

Engineering Contradiction:

Improvemanufacturing process stabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the support function into multiple discrete components: insulating structures positioned at specific locations and mandrels positioned within the conductive gate contact. This segmented approach provides necessary mechanical support while maintaining a relatively simple overall structure that does not significantly increase device complexity

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent uses mandrels as temporary support structures that are formed during manufacturing but may be removed or replaced in subsequent processes. These disposable-like mandrels provide necessary support during critical manufacturing stages without requiring permanent complex structural modifications to the final device

Inventive Principle:

Principle #27Cheap short-living objects (Disposable)

Data Source

PatentUS20250006662A1Semiconductor memory device and manufacturing method of the semiconductor memory device

Publication Date: 2025.01.02 SK HYNIX INC

AI summary

There are provided a semiconductor memory device and a manufacturing method of a semiconductor memory device. The semiconductor memory device includes a stack structure including a cell array region and a contact region extending from the cell array region, a cell plug penetrating the cell array region of the stack structure, a conductive gate contact penetrating the contact region of the stack structure, and a plurality of first support structures bordering a perimeter of the conductive gate contact and disposed to be spaced apart from the center of the conductive gate contact at a first distance.