Semiconductor Memory Device Gate Sharing Transistor Layout
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Solution Overview
Problem
Current semiconductor memory devices face challenges in reducing external size while maintaining circuit area, particularly in integrating a sense amplifier, due to limitations in interconnect routing and transistor arrangement.
Innovation Solution
The semiconductor memory device employs a structure where gate sharing transistors with easily routable gate interconnects are used in regions with high lead-out interconnects, and gate separation transistors are used in regions with sparse interconnects, allowing for reduced external size and secure circuit area allocation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If gate sharing transistors are used in regions with high lead-out interconnects, then ease of routing is improved, but device area increases
Solution Approach 1:
The patent applies different transistor configurations to different regions of the memory device based on local interconnect density. Gate sharing transistors are used in regions with high lead-out interconnects where routing ease is prioritized, while gate separation transistors are used in regions with sparse interconnects where area efficiency is prioritized. This localized differentiation resolves the contradiction by optimizing each region for its specific requirements rather than applying a uniform design across the entire device.
Solution Approach 2:
The memory device is segmented into multiple regions with different transistor configurations. The device area is divided such that certain blocks use gate sharing transistors while others use gate separation transistors. This segmentation allows the device to simultaneously achieve ease of routing in high-density regions and area efficiency in low-density regions, resolving the technical contradiction through spatial division of design strategies.
2Area of stationary object
If device area is reduced, then external size is reduced, but circuit area allocation becomes constrained
Solution Approach 1:
By applying different transistor configurations to different regions, the patent optimizes circuit area allocation across the device. Regions with gate separation transistors provide area efficiency for compact layouts, while regions with gate sharing transistors provide routing flexibility for complex interconnects. This local differentiation ensures that the reduced device area still accommodates all necessary circuits with appropriate area allocation.
Solution Approach 2:
The patent introduces design flexibility through the selective use of different transistor configurations, allowing the circuit area allocation to adapt to different functional requirements. The mixed configuration approach enables dynamic optimization of space utilization versus routing complexity, ensuring that circuit area allocation remains versatile even as the overall device area is reduced.
3Area of stationary object
If gate separation transistors are used in regions with sparse interconnects, then device area is reduced, but routing complexity increases
Solution Approach 1:
The patent strategically places gate separation transistors only in regions with sparse interconnects where their area-saving benefits can be realized without excessive routing complexity. In contrast, gate sharing transistors are placed in regions with high lead-out interconnects where routing simplicity is more critical. This localized application resolves the contradiction by matching transistor configuration to regional interconnect density characteristics.
Data Source
AI summary
According to one embodiment, a semiconductor memory device includes first, second, third and fourth word lines coupled to first, second, third and fourth memory cells, respectively. A first transistor includes a first gate and is electrically coupled to the first word line. A second transistor includes a second gate and is electrically coupled to the second word line. A third transistor includes a third gate and is electrically coupled to the third word line. A fourth transistor includes a fourth gate and is electrically coupled to the fourth word line. The first gate is included in a first conductive layer. The second gate is included in a second conductive layer arranged away from the first conductive layer. The third and fourth gates are included in a third conductive layer which is integral and continuous.