Memory Gate Voltage Adjustment for Temperature-Dependent Writing Time
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The actual time at which data is written into memory can be affected by temperature, leading to incomplete data writing due to longer writing times than the preset writing time, which can result in reduced reading-writing efficiency.
Innovation Solution
A method and system that acquire the mapping relationship between transistor temperature, gate voltage, and data writing time, allowing for adjustment of the gate voltage based on current temperature to ensure data is written within a preset time, using a system with acquisition, processing, and adjustment modules to stabilize the writing time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the writing time is extended to ensure complete data writing, then the data writing completeness is improved, but the reading-writing efficiency deteriorates
Solution Approach 1:
The patent applies dynamics by making the gate voltage adjustable based on temperature conditions. The gate voltage is dynamically modified according to the detected temperature and pre-stored mapping relationships, allowing the writing time to be optimized for each temperature condition rather than using a fixed conservative writing time. This resolves the contradiction by enabling complete data writing at each temperature point while maintaining overall high efficiency through dynamic adaptation.
Solution Approach 2:
The patent changes the parameter of gate voltage based on temperature variations. By storing multiple mapping relationships between temperature, gate voltage, and writing time, and selecting the appropriate mapping based on detected temperature, the system optimizes the writing process for each temperature condition. This parameter change approach allows the system to achieve both complete data writing and high reading-writing efficiency by avoiding unnecessarily long writing times at temperatures where faster writing is possible.
2Productivity
If the gate voltage is increased to speed up data writing, then the reading-writing efficiency is improved, but the data writing completeness deteriorates
Solution Approach 1:
The patent applies parameter changes by adjusting the gate voltage according to temperature conditions. For each detected temperature, the system selects a mapping relationship that specifies the appropriate gate voltage and writing time. This ensures that the gate voltage is high enough to enable fast writing while the writing time is sufficient to guarantee complete data writing, thus resolving the contradiction between efficiency and completeness.
Solution Approach 2:
The patent implements feedback by detecting the temperature and using this information to select the appropriate mapping relationship between gate voltage, writing time, and temperature. This feedback mechanism ensures that the gate voltage and writing time are always matched appropriately for the current temperature condition, preventing both incomplete writing and unnecessarily slow writing, thus resolving the contradiction between completeness and efficiency.
3Device complexity
If a fixed writing time is used for all temperature conditions, then the system complexity is reduced, but the reading-writing efficiency deteriorates due to temperature-induced delays
Solution Approach 1:
The patent applies dynamics by implementing a temperature-dependent gate voltage adjustment mechanism. The system detects temperature and dynamically selects from pre-stored mapping relationships to determine the appropriate gate voltage and writing time. This dynamic approach optimizes writing efficiency for each temperature condition without requiring complex real-time calculations, thus resolving the contradiction between simplicity and efficiency.
Solution Approach 2:
The patent applies preliminary action by pre-storing multiple mapping relationships between temperature, gate voltage, and writing time before operation. When the system operates, it simply detects the temperature and looks up the corresponding mapping relationship, avoiding complex real-time computations. This preliminary preparation enables efficient temperature-compensated writing while maintaining system simplicity, resolving the contradiction between low complexity and high efficiency.
Data Source
AI summary
A method for adjusting the memory includes: acquiring a mapping relationship between a temperature of a transistor, a gate voltage of the transistor, and an actual time at which data is written into the memory; acquiring a current temperature of the transistor; and adjusting the gate voltage, based on the current temperature and the mapping relationship, so that the actual time at which the data is written into the memory corresponding to the adjusted gate voltage is within a preset writing time.