3D Memory Device With High-k Block Insulating Films
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current memory devices face challenges in achieving high integration density while maintaining the properties of memory cells, particularly in suppressing electric field generation and erroneous reading due to the coupling of semiconductor portions in three-dimensional memory structures.
Innovation Solution
The memory device incorporates a configuration with two memory strings coupled in parallel, separated by pillars, and utilizes high-k dielectric block insulating films and charge storage films to improve integration density and reduce electric field interference, along with specific etching and formation processes to enhance the properties of memory cell transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional memory structure is adopted to increase integration density, then storage capacity is improved, but electric field coupling between semiconductor portions causes erroneous reading
Solution Approach 1:
The semiconductor structure is divided into multiple independent semiconductor portions (first semiconductor portion, second semiconductor portion, third semiconductor portion) separated by insulating films. This segmentation prevents electric field coupling between adjacent memory strings while maintaining high integration density through vertical stacking.
Solution Approach 2:
Insulating films are introduced as intermediary layers between semiconductor portions to block electric field coupling. The insulating films act as mediators that physically separate charge storage regions while allowing the memory structure to maintain its three-dimensional integrated configuration.
2Quantity of substance
If multiple memory strings are coupled in parallel to increase integration density, then storage capacity is improved, but electric field interference between strings increases
Solution Approach 1:
Multiple memory strings are segmented into independent semiconductor portions separated by insulating films. Each semiconductor portion is electrically isolated, preventing electric field interference while allowing parallel coupling of multiple strings for high integration density.
Solution Approach 2:
Different regions of the memory structure have different properties: conductive regions for charge storage and insulating regions for isolation. The insulating films are strategically placed in specific locations where electric field coupling would occur, providing localized protection against interference while maintaining overall structure integrity.
3Reliability
If high-k dielectric block insulating films are used to suppress electric field coupling, then reading accuracy is improved, but manufacturing complexity increases
Solution Approach 1:
The insulating films serve dual functions: they act as block insulating films to prevent electric field coupling between semiconductor portions, and they serve as etch stop films during manufacturing processes. This merging of functions reduces the number of separate layers needed and simplifies the overall manufacturing process.
Solution Approach 2:
The high-k dielectric materials are selected to provide multiple properties: high dielectric constant for electric field blocking, appropriate etch selectivity for manufacturing, and thermal stability for processing. This multi-functionality allows a single material layer to address multiple requirements, reducing manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves integration density, suppresses erroneous reading, and enhances the properties of memory cell transistors by reducing electric field interference and maintaining the integrity of charge storage and insulating films.
Implementation Method 1
block insulating films having a dielectric constant higher than that of the tunnel insulating films
Data Source
AI summary
A memory device includes a first and second conductor respectively included in a first and second layer stack stacked in a first direction and separated from each other; a first and second portion of a semiconductor extending in the first direction between the first and the second layer stack, and separated from each other in same layer; a first film between the first conductor and the first portion; a second film between the second conductor and the second portion; a first insulator between the first conductor and the first film; a second insulator between the second conductor and the second film; a third insulator between the first insulator and the first film; and a fourth insulator between the second insulator and the second film. The third and fourth insulator have a higher dielectric constant than the first and second insulator.