Memory Device Hole Injection Programming Mechanism
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Solution Overview
Problem
Current memory devices face inefficiencies in programming and erasing operations due to the limitations of threshold voltage control methods, particularly in achieving stable data storage across power interruptions.
Innovation Solution
A memory device employing a hole injection method for programming, where the threshold voltage of memory cells is decreased below a set level, and an electron charging method for erasing, where the threshold voltage is increased above the set level, allowing for effective data storage and retrieval.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional programming method is used to increase threshold voltage, then data can be stored, but the write speed and programming efficiency are limited
Solution Approach 1:
The patent changes the physical mechanism of threshold voltage adjustment from conventional electron trapping to hole injection. By applying reverse bias voltage and injecting holes into the floating gate, the threshold voltage is adjusted more rapidly and efficiently, resolving the contradiction between reliable data storage and programming speed.
Solution Approach 2:
The patent replaces the conventional programming mechanism with a hole injection mechanism using reverse bias voltage. This substitution enables faster charge transfer to the floating gate, improving programming efficiency while maintaining data storage reliability through stable threshold voltage control.
2Reliability
If a conventional erasing method is used to decrease threshold voltage, then data can be cleared, but the erase speed and efficiency are limited
Solution Approach 1:
The patent changes the erasing mechanism from conventional electron removal to hole injection under reverse bias. By injecting holes into the floating gate during erasure operations, the threshold voltage is decreased more rapidly and completely, resolving the contradiction between thorough data erasure and erase speed.
3Use of energy by moving object
If threshold voltage control is not optimized, then power consumption may be lower, but data retention during power interruptions is compromised
Solution Approach 1:
The patent implements threshold voltage verification through read operations that sense whether the threshold voltage is below or above a reference level. This feedback mechanism ensures data is properly programmed or erased, maintaining data retention reliability while allowing efficient power management during operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and efficiency of data storage by ensuring that memory cells can maintain data integrity even without continuous power supply, improving the overall performance of memory devices.
Implementation Method 1
the program operation is performed by using a hole injection method
Implementation Method 2
the erase operation is performed by using an electron charging method
Data Source
AI summary
There are provided a memory device and an operating method thereof. The memory device includes: a memory block including a plurality of memory cells; and a peripheral circuit for performing a program operation and an erase operation on the memory block. The program operation is performed by using a hole injection method, and the erase operation is performed by using an electron charging method. The plurality of memory cells are programmed when a threshold voltage of each of at least some of the plurality of memory cells is decreased to be less than a set level in the program operation, and are erased when the threshold voltage of each of the plurality of memory cells is increased to be the set level or higher in the erase operation.