Memory Device IDR Data Error Repair Using Inverted Replica Pages
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Solution Overview
Problem
Non-volatile memory devices face reliability issues in reading setting data due to data deterioration during manufacturing, especially when exposed to high temperatures, leading to errors in setting operating conditions.
Innovation Solution
A memory device architecture that includes a cell array with multiple pages, where one page stores IDR data and another page stores replica IDR data with inverted bit values, allowing for error recovery by reading and using the replica data when errors occur in the IDR data.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If replica IDR data with inverted bit values is stored in another page, then data reliability is improved and errors can be recovered, but device complexity increases due to additional storage requirements
Solution Approach 1:
The patent creates a copy of the IDR data with inverted bit values and stores it in a separate page. This replica copy serves as a backup that can be used to recover from read failures in the original IDR data, directly improving reliability while using the copying mechanism to resolve the contradiction
Solution Approach 2:
The patent segments the storage of IDR data by separating the original IDR data and its replica into different pages. This segmentation allows independent access and recovery operations, enabling error correction without requiring the entire system to fail, thus improving reliability while maintaining manageable device complexity through modular organization
2Ease of repair
If multiple IDR data pairs are stored in the cell array, then the ability to repair errors is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The patent performs preliminary actions by pre-storing multiple IDR data pairs with inverted bit values in the cell array during manufacturing. This preliminary preparation enables error repair capabilities to be activated later during operation without requiring complex real-time processing, thus enhancing ease of repair while keeping manufacturing precision requirements manageable through advance preparation
Data Source
AI summary
Provided are a memory device storing setting data and a memory system including the same. The memory device may include a cell array including a plurality of cell blocks, each including a plurality of pages, and a control logic that controls a program and read operation on the cell array, wherein at least one page of the cell array stores information data read (IDR) data including information related to a setting operation of the memory device, at least one other page of the cell array stores replica IDR data including inverted bit values of the IDR data, and the control logic controls a recovery operation for repairing errors in the IDR data by reading the replica IDR data when a read fail of the IDR data occurs.