Memory Device Illegal Command Reaction Circuit

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Solution Overview

Problem

Memory devices face security and performance degradation due to illegal commands that violate operational thresholds, such as rowhammer events, which can lead to unauthorized access and data corruption.

Innovation Solution

Implementing an illegal command detection and reaction system within the memory device, utilizing an illegal reaction circuit to erase memory cells and notify the host device of illegal operations, with optional enablement/disabling via a fuse register and mode register to manage reaction to detected commands.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the memory device performs all received commands without validation, then productivity is maintained, but security and reliability deteriorate due to illegal operations violating operational thresholds

Engineering Contradiction:
ImprovesecurityVSAvoidcommand execution throughput
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent implements preliminary validation of commands against operational thresholds before execution. The memory device checks whether received commands would cause threshold violations (such as rowhammer events) and blocks illegal commands before they can affect memory cells, thereby preventing security issues while maintaining productivity for legitimate commands

Inventive Principle:
Principle #10Preliminary action

2Reliability

If the memory device blocks all commands that might violate thresholds, then security is improved, but device complexity increases due to additional detection and reaction circuits

Engineering Contradiction:
ImprovesecurityVSAvoidcircuit structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the memory device into distinct functional components: a command reception unit, a threshold validation unit, and an execution unit. This segmentation allows the security validation function to be added as a separate module without fundamentally redesigning the entire memory architecture, thereby managing device complexity while improving security

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces an intermediary validation layer between command reception and execution. This intermediary component checks commands against operational thresholds and determines whether to allow or block execution, providing a modular approach to security that adds minimal complexity compared to integrated security mechanisms

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If the memory device erases memory cells in response to detected illegal operations, then security is enhanced by preventing unauthorized access, but loss of information occurs in the affected memory cells

Engineering Contradiction:
ImprovesecurityVSAvoiddata in memory cells
Core Design Contradiction:
ReliabilityVSLoss of information

Solution Approach 1:

The patent converts the potential harm of illegal operations into a beneficial security feature by implementing an erasure reaction. When an illegal command is detected, the associated memory cells are automatically erased, preventing unauthorized access or data corruption. The information loss is intentional and controlled, transforming a negative outcome into a security enhancement that protects more critical data

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Data Source

PatentUS11886745B2Illegal operation reaction at a memory device
Publication Date: 2024.01.30 MICRON TECHNOLOGY INC
  • US11886745B2 patent drawing
  • US11886745B2 patent drawing
  • US11886745B2 patent drawing

AI summary

Methods, systems, and devices for illegal operation reaction are described. A memory device may receive one or more commands to perform one or more respective access operations on an array of memory cells. A first circuit of the memory device may determine that the one or more commands would violate one or more thresholds associated with operation of the memory device, such as a timing threshold. In some cases, the first circuit may compare the one or more commands to the one or more patterns of commands stored at the memory device. A second circuit of the memory device may erase one or more memory cells of the memory device based on determining that the one or more thresholds associated with operation of the memory device would be violated, based on comparing the set of commands to the one or more patterns, or a combination thereof.