Semiconductor Memory Initialization Circuit Standby Failure Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor memory devices experience standby failures due to current leakage, which is not accurately detected by static default condition testing, leading to power wastage and reduced battery life in portable electronics.
Innovation Solution
A semiconductor memory device with an initialization circuit that detects operating modes and adjusts the output data values of peripheral circuit components to prevent current leakage by activating or deactivating set and reset signals, ensuring the data output values remain in a default state during standby mode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If static default condition testing is used during initialization, then the testing process is simple, but standby failures due to current leakage are not accurately detected
Solution Approach 1:
The patent transitions from static default condition testing to dynamic mode transition testing. The testing method now includes performing mode transitions between active mode and standby mode, and measuring current consumption during these transitions to detect standby failures. This dynamic approach accurately captures current leakage that only manifests during mode transitions, resolving the contradiction between testing simplicity and detection accuracy.
2Use of energy by stationary object
If peripheral circuits are disabled in standby mode to reduce power consumption, then power consumption is reduced, but current leakage through current paths persists
Solution Approach 1:
The patent applies preliminary action by performing mode transition testing before the device is deployed or during manufacturing. This testing identifies potential current leakage paths in advance, allowing the device to be screened for standby failures before actual use. The testing process includes transitioning to standby mode and measuring current consumption to detect leakage that would occur during normal operation.
3Ease of operation
If residual data values from active mode remain in peripheral circuit components during standby mode, then the device operates in standby mode, but current paths are formed causing standby failures
Solution Approach 1:
The patent implements feedback by measuring current consumption during mode transitions and using this information to detect standby failures. The testing method monitors current consumption when transitioning from active to standby mode, and if abnormal current consumption is detected, it indicates a standby failure condition. This feedback mechanism allows accurate identification of devices with current leakage issues.
Data Source
AI summary
A semiconductor memory device includes a cell core storing data, a plurality of peripheral circuit components, collectively driving data to/from the cell core and providing a default state at an output signal state during an initialization process upon power-up, and an initialization circuit detecting a standby mode of operation for the semiconductor memory device, and upon detecting the standby mode controlling operation of the plurality of peripheral circuit components to provide the default state as the signal state during standby mode.