Semiconductor Memory Inter-String Unit Structure
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Solution Overview
Problem
Current semiconductor memory devices face challenges in efficiently performing read and write operations due to unintended activation of select transistors, leading to operational failures and increased complexity in manufacturing processes.
Innovation Solution
Incorporating a conductive layer and an inter-string unit structure that functions as an electric charge accumulating layer, allowing for controlled voltage application to prevent unintended transistor activation, and optionally using insulating materials to reduce electrostatic capacity and improve manufacturing yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional read and write operations are performed without additional control structures, then the manufacturing process is simpler, but unintended activation of select transistors occurs leading to operational failures
Solution Approach 1:
The patent introduces an inter-string unit structure as an intermediary component between string units. This structure includes a conductive layer that functions as an electric charge accumulating layer, positioned between bit lines and serving as a mediator to control voltage distribution and prevent unintended transistor activation during read and write operations.
Solution Approach 2:
The patent divides the memory structure into distinct segments by introducing inter-string unit structures between string units. This segmentation allows independent control of voltage application to different string units, enabling selective activation and preventing interference between adjacent strings during operations.
2Reliability
If the inter-string unit structure with conductive layer is added to prevent unintended transistor activation, then operational reliability improves, but manufacturing complexity increases
Solution Approach 1:
The conductive layer in the inter-string unit structure serves multiple functions simultaneously: it acts as an electric charge accumulating layer for voltage control, functions as a structural separator between string units, and provides a platform for optional insulating material deposition. This multi-functionality reduces the need for additional separate components and processes.
Solution Approach 2:
The patent applies insulating materials selectively in specific regions between string units where needed for electrical isolation. This localized application of different material properties allows precise control of electrical characteristics in critical areas while maintaining simplicity in other regions, optimizing both reliability and manufacturability.
3Manufacturing precision
If insulating materials are added to the inter-string unit structure to reduce electrostatic capacity, then operational precision improves, but manufacturing complexity increases
Solution Approach 1:
The patent modifies the electrostatic capacity parameter by introducing insulating materials with specific dielectric properties into the inter-string unit structure. This changes the electrical characteristics of the structure, reducing parasitic capacitance between adjacent strings and improving voltage control precision during read and write operations.
4Reliability
If additional control structures are implemented to prevent unintended transistor activation, then operational reliability improves, but manufacturing cost increases
Solution Approach 1:
The patent combines multiple functions into the inter-string unit structure: voltage control, electrical isolation, and charge accumulation are integrated into a single structural element. This merging reduces the total number of separate components needed, simplifying the manufacturing process and reducing overall production costs while maintaining reliability improvements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables reliable read and write operations by preventing unintended transistor activation and reduces manufacturing costs by eliminating the need for certain components, such as the contact CSHE, while maintaining operational reliability.
Implementation Method 1
Incorporating a conductive layer and an inter-string unit structure that functions as an electric charge accumulating layer, allowing for controlled voltage application to prevent unintended transistor activation
Implementation Method 2
optionally using insulating materials to reduce electrostatic capacity and improve manufacturing yield
Data Source
AI summary
A semiconductor memory device includes first conductive layers arranged in a first direction, a second conductive layer disposed at a position overlapping with the first conductive layers viewed from the first direction, a third conductive layer disposed at a position overlapping with the first conductive layers viewed from the first direction and arranged with the second conductive layer in a second direction intersecting with the first direction, a first semiconductor column opposed to the first conductive layers and the second conductive layer, a second semiconductor column opposed to the first conductive layers and the third conductive layer, and a fourth conductive layer disposed between the second conductive layer and the third conductive layer. The fourth conductive layer has a length in the second direction smaller than a length of the second conductive layer in the second direction and a length of the third conductive layer in the second direction.