Multiphase Memory Interface Timing Correction for Reliable Data Transfer
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Solution Overview
Problem
Semiconductor memory devices face challenges in maintaining data integrity and speed due to errors caused by phase changes or distortions in multiphase clock signals, which affect the synchronization and reliability of data transmission.
Innovation Solution
A memory device and system that incorporate a multiphase clock generator, error correction blocks, and data multiplexers to correct toggle timing errors in least significant and most significant bit data, ensuring precise synchronization with the system clock's phases, thereby enhancing data transmission reliability and speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-level signaling is used to increase data transmission speed, then productivity is improved, but reliability deteriorates due to phase errors in multiphase clock signals
Solution Approach 1:
The data transmission path is segmented into multiple parallel paths, each handling specific bit significance (MSB and LSB). Each path has dedicated error correction blocks that process data according to its specific timing requirements, allowing independent optimization of each segment while maintaining overall system reliability at high speeds.
Solution Approach 2:
Error correction is performed preliminarily within each data path before data is combined or transmitted further. The first and second error correction blocks correct toggle timing errors in LSB and MSB paths respectively before the data proceeds to subsequent processing stages, preventing error propagation and ensuring data integrity at high transmission speeds.
2Productivity
If divided clock signals are generated for high-speed data transmission, then productivity is improved, but manufacturing precision deteriorates due to phase distortions
Solution Approach 1:
Each data path is equipped with specialized error correction blocks tailored to its specific timing characteristics. The first error correction block is optimized for LSB timing correction while the second is optimized for MSB timing correction, allowing each path to achieve high timing precision locally despite the challenges of multiphase clock distribution.
Solution Approach 2:
The error correction blocks dynamically adjust timing parameters of data signals to compensate for phase distortions in the divided clock signals. By changing the toggle timing parameters of data based on detected phase errors, the system maintains precise synchronization even when using multiple divided clock signals for high-speed operation.
Data Source
AI summary
A memory device includes a multiphase clock generator which generates a plurality of divided clock signals, a first error correction block which receives a first divided clock signal among the plurality of divided clock signals, a first data multiplexer which transmits first least significant bit data corresponding to the first divided clock signal, a second error correction block which receives the first divided clock signal, and a second data multiplexer which transmits first most significant bit data corresponding to the first divided clock signal. The first error correction block receives the first least significant bit data and corrects a toggle timing of the first least significant bit data. The second error correction block receives the first most significant bit data and corrects a toggle time of the first most significant bit data.