Memory Device Intermediate Select Gate Lines Read Disturbance

The memory device divides the select gate lines into multiple independent segments: first select gate lines connected to first select transistors, second select gate lines connected to second select transistors, and intermediate select gate lines connected to intermediate select transistors. This segmentation allows independent control of each array layer, enabling electrical separation during read operations to reduce reading disturbance and parasitic capacitance between layers.

Intermediate select gate lines and intermediate select transistors are introduced as intermediary elements between the first and second array layers. These intermediaries provide independent control over the electrical connections between array layers, allowing selective isolation of layers during read operations to reduce parasitic capacitance and reading disturbance without requiring complete redesign of the memory structure.

The memory device segments the array layers into first and second array layers with independent select gate line control. This allows selective activation of only the necessary array layers during read operations, reducing the number of simultaneously active transistors and thereby reducing total power consumption while maintaining high memory density through vertical stacking.

The memory device dynamically controls the electrical connections between array layers by selectively activating first select transistors, second select transistors, and intermediate select transistors based on read operation requirements. This dynamic control optimizes power consumption by minimizing the number of active electrical paths while maintaining high memory density through multi-layer architecture.

The memory device segments control of electrical connections into independent groups: first select gate lines for first select transistors, second select gate lines for second select transistors, and intermediate select gate lines for intermediate select transistors. This segmentation simplifies control logic by allowing independent activation of specific array layers during read operations, improving operation speed through reduced interference while maintaining manageable control complexity.

Intermediate select gate lines serve as intermediary control elements that simplify the management of electrical connections between array layers. By introducing these intermediaries, the device achieves electrical separation for improved read speed while maintaining straightforward control logic, as each intermediate select gate line directly controls the connection state between specific layers without requiring complex multi-variable control.