3D Memory Device With Isolation Structures Contacting Common Source Pillars
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Solution Overview
Problem
Current 3D memory devices face challenges in increasing memory density and array efficiency while maintaining high performance and reliability.
Innovation Solution
The method involves forming a memory device with isolation structures that directly contact common source pillars, creating separate first and second memory structures, and using a stack of conductive and insulating layers to enhance memory density and array efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory structures are separated by isolation structures that directly contact common source pillars, then memory density in unit area is increased and array efficiency is improved, but device complexity increases
Solution Approach 1:
The memory device is segmented into first memory structures and second memory structures separated by isolation structures. This segmentation allows independent optimization of each memory structure while sharing common source pillars, thereby increasing memory density without proportionally increasing overall device complexity.
Solution Approach 2:
Common source pillars serve multiple memory structures simultaneously, acting as shared electrical connections for both first and second memory structures. This multi-functionality reduces the total number of source pillars needed, offsetting the complexity increase from adding isolation structures.
2Speed
If metal conductive layers are used instead of conventional conductive layers, then RC delay is reduced and operating speed is improved, but manufacturing complexity increases
Solution Approach 1:
The conductive layers are changed from conventional materials to metal materials, fundamentally altering the electrical parameters (conductivity, resistance) of the memory device. This parameter change reduces RC delay and improves operating speed, despite the added complexity in metal layer deposition and patterning processes.
Data Source
AI summary
A method for forming a memory device is provided. The memory device includes a substrate; a stack including a plurality of conductive layers and a plurality of insulating layers being alternatively stacked on the substrate; a plurality of memory structures formed on the substrate and penetrating the stack; a plurality of isolation structures formed on the substrate and penetrating the stack, wherein the isolation structures dividing the memory structures into a plurality of first memory structures and a plurality of second memory structures; and a plurality of common source pillars formed on the substrate and penetrating the stack, wherein the common source pillars directly contact the isolation structures.