Non-volatile Memory Reading via Parallel Latch Voltage Averaging

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Solution Overview

Problem

Existing NAND-type non-volatile semiconductor memory devices face challenges in data reading due to insufficient sensing margin caused by Random Telegraph Signal noise, trapped charge transfer, instability in sensing circuits, and variations in reading-out voltage, leading to erroneous data retrieval.

Innovation Solution

A non-volatile semiconductor memory device and method utilizing an odd number of latch circuits with capacitors to selectively hold and parallelly connect voltages from multiple memory cell readings, determining data values by a majority rule based on composite voltages, thereby reducing circuit size and processing time.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If multiple read-out operations are performed and averaged to improve data accuracy, then measurement precision is improved, but loss of time increases

Engineering Contradiction:
Improvedata reading accuracyVSAvoidreading time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent performs multiple read-out operations and stores the results in latch circuits before final determination. By preparing multiple candidate values in advance through preliminary read operations, the system can quickly determine the majority value without performing multiple complete read cycles, thus reducing the time penalty while maintaining accuracy.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent replaces the conventional sequential averaging process with a parallel voltage comparison mechanism. Instead of sequentially reading, averaging, and comparing values, the system uses latch circuits to hold voltages and a majority determination circuit to simultaneously compare and determine the result, substituting mechanical sequential operations with electronic parallel processing.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Measurement precision

If conventional sensing circuits are used to read memory cell data, then device complexity is kept simple, but measurement precision deteriorates due to insufficient sensing margin

Engineering Contradiction:
Improvesensing marginVSAvoidcircuit complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent divides the sensing function into multiple independent latch circuits, each capable of holding a read-out voltage. This segmentation allows each latch to be simple in structure while the collective system achieves high precision through majority determination, resolving the contradiction between individual circuit simplicity and overall measurement precision.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent merges multiple latch circuit outputs into a majority determination circuit that combines their voltages. This merging process integrates the results from multiple simple latch circuits to produce a high-precision output, achieving enhanced sensing margin through the collective action of multiple simple components rather than a single complex circuit.

Inventive Principle:
Principle #5Merging (Combining)

3Productivity

If logical operations are performed sequentially to determine majority rule, then device complexity is reduced, but productivity decreases

Engineering Contradiction:
Improvedata retrieval speedVSAvoidcircuit structure
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent replaces sequential logical operations with a parallel voltage comparison mechanism. The majority determination circuit simultaneously compares voltages from multiple latch circuits and determines the result in one operation, substituting multi-step sequential logic with a single parallel electronic comparison process, thereby dramatically improving productivity.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent performs preliminary read-out operations and stores results in latch circuits before the final determination step. This preliminary action prepares all candidate values in advance, allowing the majority determination to be performed in a single quick operation rather than requiring multiple sequential logical steps, thus improving overall data retrieval speed.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Significantly shortens data reading time and reduces circuit size by averaging voltages across multiple readings, enhancing data retrieval accuracy and efficiency compared to prior arts.

Implementation Method 1

each of which comprising a capacitor for selectively holding a voltage of each of the data read-out from the memory cell for the odd number of times in sequence

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

connecting the capacitor of each of the odd number of latch circuits in parallel after the capacitor of each of the odd number of latch circuits selectively holding the voltage of each of the data read-out from the memory cell for the odd number of times in sequence, and determining the data value by the majority rule based on a composite voltage of the capacitor of each of the odd number of latch circuits connected in parallel

Methodology Applied
Scientific EffectVoltage averaging through parallel connection: Capacitance

Data Source

PatentUS9190158B2Non-volatile semiconductor memory device and reading-out method therefore
Publication Date: 2015.11.17 POWERCHIP SEMICON MFG CORP
  • US9190158B2 patent drawing
  • US9190158B2 patent drawing
  • US9190158B2 patent drawing

AI summary

In a non-volatile semiconductor memory device outputting a data value determined according to a majority rule by reading-out data from each memory cell for an odd number of times, an odd number of latch circuits, each of which comprises a capacitor for selectively holding a voltage of each of the data read-out from the memory cell for the odd number of times in sequence, is provided. The capacitor of each latch circuit is connected in parallel after the capacitor of each latch circuit selectively holds the voltage of each of the data read-out from the memory cell for the odd number of times in sequence, and the data value is determined by the majority rule based on a composite voltage of the capacitor of each latch circuit connected in parallel.