Semiconductor Memory Device Layer Parameter Segmentation
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in efficiently managing operation parameters for read and write operations across different conductive layers, leading to inconsistencies in cell characteristics and memory device performance.
Innovation Solution
The semiconductor memory device employs a configuration with multiple conductive layers and charge accumulating portions, where specific operation parameters are adjusted based on the conductive layer selected during read and write operations to ensure uniformity and improve memory device quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single operation parameter is used for all conductive layers, then the device complexity is reduced, but the manufacturing precision and cell characteristic uniformity deteriorate
Solution Approach 1:
The patent divides the operation parameters into different sets corresponding to different conductive layers. Each conductive layer has its own optimized operation parameters (first operation parameters for first conductive layer, second operation parameters for second conductive layer), allowing precise control and uniform cell characteristics across layers while maintaining manageable complexity through systematic organization.
2Manufacturing precision
If different operation parameters are used for different conductive layers, then the cell characteristic uniformity is improved, but the device complexity increases
Solution Approach 1:
The patent implements parameter changes by establishing distinct operation parameter sets for different conductive layers. The first operation parameters are specifically optimized for the first conductive layer, while the second operation parameters are optimized for the second conductive layer, enabling uniform cell characteristics across layers through targeted parameter optimization rather than arbitrary complexity increase.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for uniform read and write operations across different conductive layers, enhancing the consistency and quality of the semiconductor memory device by optimizing cell characteristics and operation efficiency.
Implementation Method 1
The gate insulating layer comprises a memory portion capable of storing data, such as an insulative charge accumulating film of the likes of silicon nitride (Si3N4) or a conductive charge accumulating film of the likes of a floating gate
Data Source
AI summary
A semiconductor memory device comprises: a substrate; a first conductive layer separated from the substrate in a first direction and extending in a second direction; a second and a third conductive layers separated from the substrate and the first conductive layer in the first direction and aligned in the second direction; a first semiconductor layer facing the first and the second conductive layers; a second semiconductor layer facing the first and the third conductive layers; a first and a second bit lines electrically connected to the first and the second semiconductor layers. At least some of operation parameters in the case of a certain operation being executed on a memory cell corresponding to the first conductive layer differ from at least some of operation parameters in the case of the certain operation being executed on a memory cell corresponding to the second conductive layer or the third conductive layer.