Semiconductor Memory Metal-Containing Layer Electron Trapping
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Solution Overview
Problem
Current stacked type semiconductor memory devices face challenges in further shrinking while maintaining program characteristics and reliability, particularly due to the thinning of floating gate electrodes which can lead to deteriorated performance and reliability if not addressed effectively.
Innovation Solution
Incorporating a metal-containing layer with a molybdenum surface concentration of 1×10^14 cm−2 or more and 5×10^15 cm−2 or less between the block insulating film and the inter-electrode insulating film, allowing electrons to be trapped and preventing excessive energy loss, thereby enhancing program characteristics and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the floating gate electrode is made thinner to enable device shrinkage, then device size is reduced, but program characteristics and reliability deteriorate
Solution Approach 1:
A metal-containing layer is introduced as an intermediary between the block insulating film and the floating gate electrode. This layer has a specific metal surface concentration (1×10^14 cm^-2 or more and 5×10^15 cm^-2 or less) that enables it to trap electrons effectively. The metal-containing layer acts as a mediator that enhances electron trapping capability while allowing the floating gate electrode to be thinner, thus resolving the contradiction between device shrinkage and maintaining program characteristics.
2Manufacturing precision
If the floating gate electrode is made thinner to improve integration density, then manufacturing precision is improved, but electron trapping capability decreases
Solution Approach 1:
Instead of uniformly thickening the floating gate electrode throughout, the invention applies a metal-containing layer with specific local properties at the interface between the block insulating film and the floating gate electrode. This localized enhancement of electron trapping capability through the metal-containing layer allows the floating gate electrode to maintain a thin overall thickness while compensating for reduced electron trapping capability in the thinned region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor memory device achieves improved program characteristics and reliability by trapping electrons with the metal-containing layer, even when the floating gate electrode is made thinner, allowing for device shrinkage while maintaining performance.
Implementation Method 1
Incorporating a metal-containing layer with a molybdenum surface concentration of 1×10^14 cm−2 or more and 5×10^15 cm−2 or less between the block insulating film and the inter-electrode insulating film, allowing electrons to be trapped and preventing excessive energy loss
Data Source
AI summary
A semiconductor memory device according to one embodiment, includes an interconnect extending in a first direction, a semiconductor member extending in a second direction crossing the first direction, an electrode provided between the interconnect and the semiconductor member, a first insulating film provided between the interconnect and the electrode, a second insulating film provided between the first insulating film and the electrode, a third insulating film provided between the electrode and the semiconductor member, and a metal-containing layer provided between the first insulating film and the second insulating film or inside the first insulating film, and having a metal surface concentration of 1×1014 cm−2 or more and 5×1015 cm−2 or less.