Memory Module with Distributed Data Buffers for Density and Power
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Solution Overview
Problem
Current memory subsystems face limitations in memory density and operational speed due to physical addressable space constraints, power dissipation, and design specifications, making it difficult to increase memory capacity without extensive hardware modifications or compromising performance.
Innovation Solution
The implementation of a memory module with a module controller and data buffers that allow for configurable address and control signal management, enabling selective data transmission between the memory controller and memory devices, thereby reducing load on the system and optimizing data paths for synchronous operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of memory devices per module is increased to improve memory density, then memory capacity increases, but power dissipation and thermal dissipation increase
Solution Approach 1:
The memory module is segmented into multiple independent ranks, each rank being a self-contained memory unit with its own control logic. This segmentation allows the memory controller to activate only the necessary ranks for current operations, reducing overall power consumption while maintaining high memory density through multiple ranks on a single module.
2Quantity of substance
If the number of memory devices per module is increased to improve memory density, then memory capacity increases, but operational speed decreases
Solution Approach 1:
By dividing the memory module into multiple independent ranks with separate control paths, the system can perform operations on different ranks simultaneously or switch between them rapidly. This segmentation maintains operational speed by allowing parallel access to different memory regions while accommodating high memory density through multiple ranks.
Solution Approach 2:
The memory controller dynamically selects and activates specific ranks based on current access patterns and operational requirements. This dynamic rank activation allows the system to optimize performance by engaging only the necessary memory resources, maintaining high operational speed while supporting high memory density configurations.
3Quantity of substance
If the addressable memory space is increased beyond current system definitions, then memory capacity expands, but extensive hardware modifications are required
Solution Approach 1:
The memory module employs universal control logic and standardized interfaces that can accommodate multiple rank configurations without requiring hardware modifications to the host system. The module controller universally manages any number of ranks through the existing memory bus protocol, enabling expanded addressable memory space while maintaining compatibility with current system architecture.
Solution Approach 2:
The module controller acts as an intermediary between the host system and multiple memory device ranks. It translates host memory requests into appropriate rank-specific operations, enabling the system to access expanded memory capacity through the existing memory interface without requiring hardware modifications to the host system.
4Quantity of substance
If more memory devices are added to increase memory capacity, then memory density improves, but thermal dissipation increases
Solution Approach 1:
Segmenting memory devices into multiple independent ranks distributes the thermal load across separate physical locations on the module. Each rank can be independently controlled and powered down when not in use, reducing overall thermal dissipation while maintaining high memory capacity through the combined capacity of multiple ranks.
Data Source
AI summary
A memory module comprises dynamic random access memory (DRAM) devices arranged in ranks, and a module controller configurable to receive address and control signals for a memory operation, and to output first module control signals to the DRAM devices, causing a selected rank to output or receive data. The module controller is further configurable to output second module control signals to a plurality of data buffers coupled to the DRAM devices via module data lines. A respective data buffer includes data paths and logic configurable to, in response to the second module control signals, enable at least a subset of the data paths to receive and regenerate signals carrying a section of the data communicated from/to corresponding module data lines. The logic is further configurable to disable the data paths when the memory module is not communicating data with the memory controller.