Memory Module Fuse Programming via Standard Interface

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Solution Overview

Problem

The existing memory module repair processes are inefficient due to the need for a laser machine to blow fuses, leading to increased costs and longer repair times, and failed memory cells cannot be repaired after packaging is complete.

Innovation Solution

A memory module with a programming interface that allows direct programming of a fuse unit through a standard interface, enabling entry into a programming mode to replace failed memory cells using a control signal generator and redundant memory cells, reducing repair time and cost without the need for a laser machine.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a laser machine is used to blow fuses for repairing failed memory cells, then the repair function can be achieved, but the repair period becomes too long and the cost increases

Engineering Contradiction:
Improvememory cell repair capabilityVSAvoidrepair period
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent replaces the mechanical/optical laser blowing system with an electrical programming system. The control signal generator produces programming signals that are transmitted through the programming interface to directly program the fuse unit, eliminating the need for laser machines and significantly reducing repair time and cost.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent introduces a control signal generator and programming interface as intermediaries between the external system and the fuse unit. This intermediary electrical programming interface allows for faster and more cost-effective fuse programming compared to direct laser blowing.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If a laser machine is used to blow fuses for repairing failed memory cells, then the repair function can be achieved, but the cost increases

Engineering Contradiction:
Improvememory cell repair capabilityVSAvoidrepair cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent replaces the expensive laser machine system with a cost-effective electrical programming system. The control signal generator and programming interface use standard electrical signals instead of expensive laser equipment, significantly reducing repair costs while maintaining repair capability.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Reliability

If the memory device is packaged before repair, then the device is protected, but failed memory cells cannot be further repaired after packaging

Engineering Contradiction:
Improvedevice protectionVSAvoidpost-packaging repair capability
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent provides repair capability before packaging, allowing failed memory cells to be identified and repaired using the programming interface and control signal generator. The redundant memory array and fuse unit are prepared in advance to enable repair of any failed cells before the packaging process makes repair impossible.

Inventive Principle:
Principle #10Preliminary action

4Reliability

If redundant memory array is used to replace failed memory cells, then the yield can be improved, but the device complexity increases

Engineering Contradiction:
Improveyield improvementVSAvoidmemory array structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The programming interface and control signal generator serve multiple functions: they are used during manufacturing for initial programming and can also be used after packaging for repair operations. This multi-functionality reduces the need for separate repair equipment, offsetting the complexity added by the redundant memory array.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS7609579B2Memory module with failed memory cell repair function and method thereof
Publication Date: 2009.10.27 ETRON TECH INC
  • US7609579B2 patent drawing
  • US7609579B2 patent drawing
  • US7609579B2 patent drawing

AI summary

A memory module with failed memory cell repair function and method thereof are provided. The memory module comprises a programming interface, a mode register, a control signal generator, a fuse unit, a main memory array and a redundant memory array, wherein the programming interface is defined by selecting pins from a standard interface of the memory module. The programming interface is used to input a plurality of programming commands and a plurality of programming data. When the failed memory cells have occurred within the main memory array, the mode register will enter into a programming mode according to the programming commands, and the control signal generator will program the fuse unit, such that the redundant memory cells of the redundant memory array will be used to replace the failed memory cells. Thus, the fuse unit can be programmed directly through the standard interface, and the repairing period and the cost will be reduced efficiently.